| Allicdata Part #: | IXTH52N65X-ND |
| Manufacturer Part#: |
IXTH52N65X |
| Price: | $ 5.71 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 650V 52A TO-247 |
| More Detail: | N-Channel 650V 52A (Tc) 660W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH52N65X Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 5.71000 |
| 10 +: | $ 5.53870 |
| 100 +: | $ 5.42450 |
| 1000 +: | $ 5.31030 |
| 10000 +: | $ 5.13900 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 660W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 113nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 68 mOhm @ 26A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH52N65X is a MOSFET with additional circuitry designed to improve performance and reduce power consumption. It is a single-gate transistor and has a maximum voltage of up to 65V. This MOSFET is suitable for various electronic applications, most notably its use as a power switch and as a DC-DC converter. It is an ideal choice for low-voltage applications and can be used in a variety of circuit designs.
A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of transistor with three terminals. The IXTH52N65X has an additional circuitry which improves its performance. It has a gate, drain and source which allows current to flow from the drain to the source when the gate voltage is positive. This MOSFET has a low-on resistance, making it suitable for use in switching circuit designs.
The IXTH52N65X is primarily used as a power switch for its low-voltage applications. It allows for a higher on resistance compared to an n-channel MOSFET with fast switching speeds. This makes the IXTH52N65X ideal for DC current applications and can be used as a power switch in a wide range of circuit designs. This MOSFET can also be used as a low-voltage DC-DC converter. It has a low-on resistance which makes it suitable for use in designs with a high-current need.
The IXTH52N65X has a maximum voltage of up to 65V and is suitable for a variety of electronic applications. It has a low gate threshold voltage, making it ideal for low-voltage operations. The IXTH52N65X can also be used in a variety of circuit designs, from digital circuits to low-voltage switching applications. It is an ideal choice for low-voltage operations and has a high enough on resistance for fast switching.
The working principle of the IXTH52N65X is based on the same principles of an n-channel MOSFET with additional circuitry designed to improve its performance. When the gate voltage is positive, current is allowed to flow from the drain to the source. This MOSFET has a low-on resistance and a high enough on resistance for fast switching. The additional circuitry helps to reduce power consumption and increase the transistor\'s overall performance.
In conclusion, the IXTH52N65X is a single-gate transistor with a maximum voltage of up to 65V. It is a MOSFET with additional circuitry designed to improve performance and reduce power consumption. It is an ideal choice for low-voltage applications and is primarily used as a power switch and as a DC-DC converter. The IXTH52N65X works on the same principles of an n-channel MOSFET, with a low-on resistance and a high enough on resistance for fast switching.
The specific data is subject to PDF, and the above content is for reference
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