| Allicdata Part #: | IXTH48N20T-ND |
| Manufacturer Part#: |
IXTH48N20T |
| Price: | $ 2.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 48A TO-247 |
| More Detail: | N-Channel 200V 48A (Tc) 275W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH48N20T Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 2.05401 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | 275W (Tc) |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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The IXTH48N20T is a high blocking voltage MOSFET developed by IXYS Power Semiconductors. It is a power MOSFET specially designed to handle large amounts of power. This MOSFET can be used in a variety of applications including industrial and automotive power systems, solar power applications, and portable power systems. The IXTH48N20T is a reliable and cost-effective choice for many applications.
The IXTH48N20T is a single enhancement type MOSFET, or "metal oxide semiconductor field effect transistor". It is composed of a source, drain and gate, which all operate together to control the current flowing through the device. The IXTH48N20T belongs to the family of through-hole MOSFETs. This type of MOSFET has a longer lead length, which allows for better heat transfer and a greater tolerance for high power. The IXTH48N20T has an enhanced gate, which provides higher reliability and improved gate control.
The IXTH48N20T has a wide variety of applications in different industries and in different applications. In industrial and automotive power systems, it can be used as a high-side switch or a low-side switch. It is also suitable for use in battery management systems, as well as in solar power systems. The IXTH48N20T is a cost-effective choice for portable power systems where space is limited and higher current switching is required. The MOSFET can also be used in other applications such as audio systems, computers, or communication systems.
The IXTH48N20T has a rating of 48 volts and can handle up to 20 Amps of DC current. It also has a low total gate charge and a low gate to source capacitance. This allows for faster switching and less power consumption when the MOSFET is turned on or off. The IXTH48N20T also has a low ON resistance, which helps to reduce the voltage drop across the device and conserve power. It has an operating temperature of -55 degrees Celsius to 175 degrees Celsius and can withstand up to 10,000 cycles of voltage applications.
The IXTH48N20T has a number of advantages over traditional MOSFETs. It is more reliable, more efficient, and more cost-effective. In addition, the through-hole design of the IXTH48N20T provides improved heat transfer and better tolerance for high power. The enhanced gate design also adds to the reliability and improved control of the device.
In conclusion, the IXTH48N20T is a reliable, efficient and cost-effective power MOSFET. It can be used in a variety of applications and provides improved heat transfer, better reliability, and improved gate control. The IXTH48N20T is a valuable addition to any power system and is well suited for use in industrial and automotive power systems, solar power systems, and portable power systems.
The specific data is subject to PDF, and the above content is for reference
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