IXTH15N50L2

The IXTH15N50L2 is a metal–oxide–semiconductor field-effect transistor (MOSFET) that belongs to the single type of MOSFETs. It is often used for power management in electrical circuits and systems and is suitable for high-power switching such as dc-dc high-efficiency power converters. This article provides an overview of IXTH15N50L2 application field and working principle.

Functional characteristics of IXTH15N50L2

IXTH15N50L2 is a 600 Volt (V), 3 Phase, N-Channel Enhanced MOSFET based on high-voltage power MOSFET process. It has industry-leading RDS(on) of 0.017 Ohm with 6 cm2on area. That makes it a suitable MOSFET device for power conversion applications.it offers lowest on-resistance and gate charge as compared to similar enhanced MOSFET. The gate charge graph (Figure1) refers to IXTH15N50L2 gate charge as a function of drain-source voltage. Its internal silicon-oxide passivation layer minimizes voltage dependent capacitance variation making it suitable for high frequency switching applications.

Figure1: Gate Charge Graph for IXTH15N50L2

As discussed above the IXTH15N50L2 has an excellent internal silicon-oxide passivation layer which makes it an ideal device to use in high frequency, high efficiency and low EMI applications like DC-DC converters, DC-AC inverters, and Automotive On-Board Chargers (OBC). The improved temperature capability (Tj=175°C) and excellent thermal performance make it feasible to use IXTH15N50L2in dc-dc converters applications and other power supplies.

Application Field of IXTH15N50L2

As discussed earlier the IXTH15N50L2 has low RDS(on) and gate charge which makes it suitable for applications like in computer, medical, energy and industrial markets. Basically, it is suitable for applications where a low RDS(on) is desired. It has a Low-resistance current source for optimal circuits, Low gate resistance for faster switching speed and Low gate charge for better EMI performance. It can be used as a switch in motor drives and power supplies as it has overload and inductive load capabilities. These features make it suitable to use in solar power generators, DC-DC converters, AC-DC rectifiers and other power electronics applications.

It is also used in applications like isolated dc-dc converters, Automotive On-Board Chargers (OBC), uninterruptible power supplies (UPS), voltage regulators, three phase brushless DC motor drives and other automotive applications. It can also be used in generalpurpose switching or as a load switch in power supplies.In addition to this, IXTH15N50L2 also offers superior thermal performance and can also be used in hard switching frequency applications like H-bridge motor drives.

Working Principle of IXTH15N50L2

IXTH15N50L2 is a Single MOSFET which works based on the principles of metal-oxide-semiconductor technology. The operation of a MOSFET is based on the movement of electrons and holes in the form of conduction and valence bands in its semiconductor material.The MOSFET is basically a three-terminal device with source, drain, and gate terminals. When no voltage is applied across the gate terminals, the MOSFET is in an OFF state and there is no current flowing through it. When a positive voltage is applied to the gate terminal, the MOSFET is ON and a large current flow occurs between the source and drain terminals.

In case of IXTH15N50L2, the N-channel is connected between the drain and source terminals which helps in creating a conducting path between them. The gate terminal is then connected to the base/gate of the N-channel which helps in controlling the flow of current between the two terminals. When a negative voltage is applied to the gate terminal, it creates a negatively charged region in the channel which makes it repel the electrons from the source and drain. This turns the MOSFET into the OFF state and no current flows between the source and drain terminals.

To summarize, IXTH15N50L2 is a versatile MOSFET device which is suitable for a wide range of applications like motor drives and other power supplies. Its internal silicon-oxide passivation layer helps in minimizing voltage dependent capacitance variation and its improved temperature capability makes it suitable for high frequency applications. As discussed above the IXTH15N50L2 is based on the principles of metal-oxide-semiconductor technology and the gate terminal is used to control the flow of current between the two terminals.