| Allicdata Part #: | IXTH16P60P-ND |
| Manufacturer Part#: |
IXTH16P60P |
| Price: | $ 7.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 600V 16A TO-247 |
| More Detail: | P-Channel 600V 16A (Tc) 460W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH16P60P Datasheet/PDF |
| Quantity: | 467 |
| 1 +: | $ 6.43230 |
| 30 +: | $ 5.27247 |
| 120 +: | $ 4.75818 |
| 510 +: | $ 3.98656 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 460W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5120pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 720 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH16P60P is a N-Channel MOSFET that is used in a variety of electronic applications. This transistor is developed by IXYS Corporation and is most commonly used in power management circuits. It is an ideal choice when looking for an efficient and reliable power switch. With its low on-state resistance, it is suitable for a variety of high frequency applications, such as buck converters.
This MOSFET is capable of operating at the maximum junction temperature of 175°C. The IXTH16P60P also features a high maximum drain current and a low gate-source voltage, further making it suitable for many circuits. Additionally, this transistor has a maximum drain-source breakdown voltage of 600 V. It is important to note, however, that the maximum ratings should not be exceeded.
The main application field of the IXTH16P60P is power management. This MOSFET is used to switch power in a power circuit. It is often used as a replacement for larger components such as BJTs and other types of MOSFETs. In addition to this, this MOSFET can also be used in motor control, load switching, and even motor drive circuits.
The working principle of this transistor is based on the effect of the P-channel transistor. This device can be used as a replacement for BJT switches. When the gate-source voltage is applied, the device conducts current from the source to the drain. This current can then be used for switching power in various circuits. The voltage that is applied to the gate determines how much current is conducted from the source to the drain.
In conclusion, the IXTH16P60P is a N-Channel MOSFET that is used in a variety of electronic applications, mainly for power management. Its low on-state resistance and high maximum drain current make it suitable for a variety of high frequency applications. The main application field of this transistor is power management and it works by allowing current to be conducted from the source to the drain once the gate-source voltage is applied.
The specific data is subject to PDF, and the above content is for reference
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|---|
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