Allicdata Part #: | IXTH250N075T-ND |
Manufacturer Part#: |
IXTH250N075T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 250A TO-247 |
More Detail: | N-Channel 75V 250A (Tc) 550W (Tc) Through Hole TO-... |
DataSheet: | IXTH250N075T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMV™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 250A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 550W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
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IXTH250N075T is the latest in high performance insulated gate field-effect transistors (IGFETs). It is suitable for high-side switching applications, as well as for general purpose, logic level, pulse, bi-directional and low on-state R ds(on) on-state applications. The IXTH250N075T is available in static and dynamic configurations.
The IXTH250N075T is a relatively high power insulated gate field effect transistor (IGFET). The IXTH250N075T is a N-channel enhancement mode device designed for use in logic level and pulse level applications. It features very low on-state resistance and good switching characteristics.
The IXTH250N075T is an enhancement-mode device, meaning that it is normally off and requires a gate (control) voltage to be switched on. When the gate voltage is applied at the appropriate level, the IXTH250N075T switches on. The IXTH250N075T has a very low on-state resistance and can handle peak current loads that are substantially higher than the operating current limits.
The IXTH250N075T application field is far-reaching and can include motor control, power supply regulation, logic level control, pulse load switching, and more. It can be used in either high-side switching applications (power handling from the source side) or low-side switching applications (power delivering to the load side). This range of application field covers off-line switching applications, as well as using it as high frequency switch with higher voltage and power demands.
The working principle of an insulated gate field effect transistor is relatively simple. The gate of the IXTH250N075T is insulated from the other elements of the device. This gate is connected to the “metal gate” of the IXTH250 075T through a dielectric material. This dielectric material acts as a barrier between the control voltage applied to the gate from outside and the current carriers within the device. When a control voltage is applied to the gate, it causes a change in the resistance of the channel, allowing more or less current to flow through the device.
The IXTH250N075T can be used in a wide range of power switching applications, including motor control, power supply regulation, logic level control, and pulse load switching. The IXTH250N075T is an optimally designed high performance insulated gate field effect transistor (IGFET) specifically designed for high side and low side switching applications. It features an extremely low on-state resistance, as well as fast switching capabilities, making it the perfect choice for power switching applications that require high current and voltage demands.
The features of the IXTH250N075T make it an ideal choice for use in a variety of power switching applications. Its high current and voltage handling capabilities make it suitable for a wide range of off-line switching applications. It can also be used in high frequency switch applications as well. With its very low on-state resistance and fast switching capabilities, the IXTH250N075T is the perfect choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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IXTH160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
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