IXTH120N15T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTH120N15T is an enhancement-mode MOSFET. It has two terminals, the drain and the source, connected to the semiconductor substrate. An isolated gate controls the conduction between the source and the drain. This insulated gate field-effect transistor has a variety of application fields: voltage short-circuiting protection, switching and amplification, electromagnetic interference shielding, and more.

The working principle of the IXTH120N15T is relatively simple. When the gate voltage is below the drain voltage, no current flows between the source and the drain, and the device acts as an open switch. When the gate voltage is increased enough to equal the drain voltage, the transistor turns on and current flows directly from source to drain. The voltage at the source is larger than the voltage at the gate, resulting in drain-source side conduction.

The IXTH120N15T has a breakdown voltage of 120V and can support a drain current of up to 15A. When the breakdown voltage is exceeded, the device will break down, resulting in a short-circuit between the gate and the drain. This can cause permanent damage to the device. The IXTH120N15T is a high-voltage device, meaning that it can handle a significant amount of voltage before breaking down. This makes it ideal for applications where a large voltage differential is required.

The IXTH120N15T is also a very fast device, with a switching time of less than 100ns. This makes it ideal for applications where fast switching is required, such as in pulse width modulation circuits. It also has a low input capacitance, which reduces the amount of energy it needs to switch. This makes it more power efficient than a comparable bipolar transistor.

The IXTH120N15T is a reliable, high-performance field-effect transistor. Its variety of application fields, as well as its fast switching speed and low input capacitance, make it an ideal choice for many applications. It is capable of handling high voltages and can be used with confidence in a range of applications.

The specific data is subject to PDF, and the above content is for reference