| Allicdata Part #: | IXTH180N10T-ND |
| Manufacturer Part#: |
IXTH180N10T |
| Price: | $ 3.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 180A TO-247 |
| More Detail: | N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO... |
| DataSheet: |  IXTH180N10T Datasheet/PDF |
| Quantity: | 230 |
| 1 +: | $ 3.26340 |
| 30 +: | $ 2.62458 |
| 120 +: | $ 2.39121 |
| 510 +: | $ 1.93630 |
| 1020 +: | $ 1.63302 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 480W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 151nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH180N10T is an n-channel enhancement-mode transistor. It belongs to IXYS\' IXTH1800 Series, which is specially designed for high-temperature and high-speed applications. This device utilizes a powerful and reliable Insulated-Gate Field-Effect Transistor (IGFET) integrated circuit for pulse handling and switching. IXTH180N10T is capable of reliably withstanding an applied voltage of up to 10V and is suitable for high switching frequency up to over 5MHz. This device is available in two packages, the TO-252 and the TO-262 packages.
IXTH180N10T is a standard N-channel MOSFET. This device is manufactured using DMOS (double layer MOS) process, which enables high device enhancement and superior breakdown voltage capability. IXTH180N10T has an excellent speed-to-breakdown voltage ratio, making it an ideal device for high-speed switching applications. Its gate design minimizes gate charge and minimizes switching losses. Furthermore, this device features a low on-resistance for better power efficiency.
The superior performance characteristics of IXTH180N10T make it suitable for a wide range of applications. These include power supply circuits, power switching circuits, and voltage regulators. It can also be used in motor drivers, servo applications, and motor speed controllers. This device is also ideal for switching batteries and as an inverter in low-power applications. Additionally, IXTH180N10T is perfect for high-current switching and amplifier applications.
The working principle of IXTH180N10T follows the normal working of any other n-channel MOSFET. When a positive voltage is applied to the gate, the current passing through the drain-source terminals is enhanced and the device becomes conductive. On the other hand, when no gate voltage is applied, the device is in its off or non-conductive state. The IXTH180N10T is designed to handle high frequency applications up to over 5MHz, which makes it suitable for high-speed switching and power amplification.
In conclusion, IXTH180N10T is an advanced and reliable N-channel MOSFET. Its insulated gate field effect transistor (IGFET) IC design enables high breakdown voltage and pulse handling capability, making it suitable for motor drivers and high-speed switching applications. IXTH180N10T also offers low on-resistance and low gate charge, making it an ideal device for amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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