| Allicdata Part #: | IXTH270N04T4-ND |
| Manufacturer Part#: |
IXTH270N04T4 |
| Price: | $ 2.61 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 40V 270A |
| More Detail: | N-Channel 40V 270A (Tc) 375W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH270N04T4 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 2.34738 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9140pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 182nC @ 10V |
| Series: | TrenchT4™ |
| Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 270A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH270N04T4 is a high-voltage field effect transistor (FET) that can be used in a large variety of applications. It is a thick-oxide insulated gate field effect transistor, which is commonly referred to as an Enhanced Mode Field-Effect Transistor (EMFT). This type of device is used in power supply parts and motor control applications, as well as in high-frequency medical and telecommunications applications.
The IXTH270N04T4 is a single N-channel enhancement mode FET. This type of device features an insulated gate that allows the user to control the current and voltage flow through the device. It has a maximum drain-source voltage rating of 270 volts and a maximum drain-source current rating of 4 amps. It also has an on-resistance of 0.6 ohms and an input capacitance of 7.1 pF. The package is also RoHS compliant.
The working principle behind an N-channel FET is simple. When the voltage applied to the gate is positive, current passes through the device from the source to the drain. When the voltage is negative, the current is blocked. This allows the device to be used as a switch, as well as for current regulation. The enhanced mode FET is a type of FET that is designed for use with lower voltages and currents. It has a lower input capacitance than other FETs, which means it can operate at higher frequencies, making it ideal for high-frequency applications such as telecommunications.
The IXTH270N04T4 is widely used in applications that require high-frequency switching, such as switch mode power supplies, motor control, and medical applications. It is also used in applications that require low on-resistance, such as display switching and digital logic. The device is reliable and offers good performance in a variety of applications, making it a popular choice.
In conclusion, the IXTH270N04T4 is a high-voltage field effect transistor that is used in a variety of applications. It is a single N-channel enhancement mode FET that has a maximum drain-source voltage rating of 270 volts, a maximum drain-source current rating of 4 amps, and an input capacitance of 7.1 pF. The device is useful for high-frequency switching and current regulation applications, as well as for applications that require low on-resistance. Its RoHS compliant package makes it an attractive option for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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