IXTH30N50

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5680pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	227nC @ 10V
Series:	MegaMOS™
Rds On (Max) @ Id, Vgs:	170 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to IXTH30N50

The IXTH30N50 is a single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in both digital and analog applications. It is a 50A (RMS) N-Channel MOSFET, meaning it is designed to allow current to flow between the drain (D) and source (S) terminals when a voltage is applied between the gate (G) and source. The IXTH30N50 has a very low and consistent on-resistance on the order of less than 0.1Ω when at 25°C, giving it superior switching performance compared to other available MOSFETs.

Overview of MOSFET Operation

Before we discuss the working principle of the IXTH30N50, let’s take a look at the general operation of a MOSFET. In all MOSFETs, the gate is isolated from the drain and source terminals and acts as an electric gate. Applied voltage on the gate causes a conducting channel to be created between the drain and the source, allowing electrons to move freely between these two terminals.A MOSFET can be thought of as an electronic switch in the sense that applying a voltage to the gate controls the flow of electrons between the drain and source. The most common type of MOSFET is the N-Channel MOSFET, as used with the IXTH30N50, in which case the electrons are attracted to the gate and the applied voltage is used to increase the attraction and build a conducting channel.

IXTH30N50 Application Fields

The IXTH30N50 is most commonly used in power switching applications due to its superior switching performance, low on-resistance, and ease of interface with other components. Some common applications of the IXTH30N50 include power supplies, H-Bridges, inverters, and motor control circuits.The IXTH30N50 is also suitable for use in many analog applications, including audio and radio circuits, amplifiers, and high-power RF amplifiers. It is also frequently used as an input switching device for logic gates, as it is able to switch very quickly between logic levels with minimal voltage drop.

IXTH30N50 Working Principle

In the IXTH30N50, the applied gate voltage causes a conducting channel to form between the drain and the source, allowing current to pass through it. As the voltage along the channel decreases, the current through it also decreases, creating a resistive path that limits the flow of electrons between the drain and source.The higher the gate voltage, the stronger the conducting channel, and the lower the resistance. The resistance of the channel is directly proportional to the amount of voltage applied to the gate, with a maximum resistance of 0.1Ω at 25°C with a gate voltage of 7V. As the temperature increases, the resistance of the channel decreases, allowing the IXTH30N50 to work much more efficiently in higher temperatures.

Conclusion

The IXTH30N50 is a single N-Channel MOSFET designed for use in both digital and analog applications due to its low on-resistance and consistent switching performance. Its working principle is governed by the gate voltage, with higher gate voltages providing better switching performance. The IXTH30N50 is suitable for use in many applications, including power supplies, H-Bridges, logic gates, audio and radio circuits, amplifiers, and high-power RF amplifiers.

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