IXTH340N04T4

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	13000pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	256nC @ 10V
Series:	TrenchT4™
Rds On (Max) @ Id, Vgs:	1.9 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	340A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTH340N04T4 Application Field and Working PrincipleThe IXTH340N04T4 is a type of insulated-gate field-effect transistor (IGFET) that belongs to the single Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) family. It is specifically designed to be used in power electronic applications and as a signal switch in a wide range of circuits. The IXTH340N04T4 is produced by Infineon Technologies, a global semiconductor supplier.The IXTH340N04T4 is a high-voltage, insulated-gate field effect transistor that offers great performance and reliability for its users. It is designed with a floating channel structure and an integrated ESD protection diode, making it suitable for high voltage applications such as DC-DC converters, PFC and OR-ing, motors drives and switching power supplies.The working principle of the IXTH340N04T4 involves the use of a source terminal, gate terminal, and drain terminal. When the gate terminal is held at a certain voltage, charge is attracted to the gate and the source-drain current flow is controlled by the gate. When the gate voltage is zero, the source-drain current is at its maximum. When the gate voltage is increased further, the current is reduce, and eventually reaches a zero value when the gate voltage is increased above a certain threshold.The flexibility of the IXTH340N04T4\'s gate voltage threshold and the resulting source-drain current makes it an ideal choice for a wide range of applications. It can be used as a switch in many AC-DC and DC-DC converters, and can be used as a switch or regulator for motors, speakers, lights, and appliances. It can also be as a switch for low-signal, high-power applications like amplifiers, audio systems, and radio receivers.The IXTH340N04T4 optimized for low on resistance and current drive capability, allowing for greater power efficiency throughout the system. It is capable of withstanding voltages up to 700V, and can operate at temperatures ranging from -40 degrees Celsius to +125 degrees Celsius.The IXTH340N04T4 is also designed with an integrated ESD protection diode. This diode is used to protect the transistor from any electrostatic discharge on the terminals. The diode provides reliable protection to the IXTH340N04T4 and its associated components, making it more durable and reliable in high voltage applications.Overall, the IXTH340N04T4 offers an ideal choice for high voltage, power electronic applications. It has the perfect combination of low on resistance and current drive capability, and its integrated ESD protection diode makes it suitable for use in a wide range of circuits and for numerous applications. Its flexibility and reliability makes it one of the most preferred MOSFETs for power-electronics applications.

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