| Allicdata Part #: | IXTH36N20T-ND |
| Manufacturer Part#: |
IXTH36N20T |
| Price: | $ 2.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 36A TO-247 |
| More Detail: | N-Channel 200V 36A (Tc) Through Hole TO-247 (IXTH... |
| DataSheet: |  IXTH36N20T Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 1.80936 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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IXTH36N20T is a type of single-channel enhancement-mode N-channel MOSFET which belongs to IXYS\' MOSFET family. It is a voltage-controlled field-effect transistor. The IXTH36N20T features a low on-resistance, low gate-charge, and low input and output capacitance.
The IXTH36N20T features a subthreshold conducting path between the source and drain which starts flowing current when the applied voltage on the gate exceeds the threshold voltage. The drain current is given by the equation: ID = (VGS - VTH)^2 /2RDS (ON).
The IXTH36N20T can be used in many applications, such as switching and power management, such as DC-DC converters, relay drivers, motor control, and many more. Due to its low on-resistance, it can be used in high-frequency applications, such as RF front-ends and boost circuitries. It can also be used in audio switching and attenuation applications, due to its low input and output capacitance.
The IXTH36N20T is also an ideal choice for automotive applications, due to its low gate-charge, high-temperature capability, and built-in protection features. It is available in a variety of packages, such as Small Outline, SOIC, TSSOP, and D2PAK.
In summary, the IXTH36N20T is an N-channel enhancement-mode MOSFET, which features low source-drain on-resistance, low gate-charge, and low input and output capacitance. It is suitable for a wide range of applications, such as DC-DC converters, RF front-ends, boost circuitries, audio switching, and attenuation, as well as other automotive applications. Its low gate-charge, thermal stability, and built-in protection features make it an ideal choice for automotive applications.
The specific data is subject to PDF, and the above content is for reference
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