| Allicdata Part #: | IXTH36N50P-ND |
| Manufacturer Part#: |
IXTH36N50P |
| Price: | $ 4.80 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 36A TO-247 |
| More Detail: | N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH36N50P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 4.32201 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 540W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH36N50P is a single isolated high-voltage, low-VCE(sat) N-channel power MOSFET device, built using advanced TrenchFET technology. It combines low on-resistance with ruggedized design and reliable high temperature operation, making it an excellent choice for design engineers looking to maximize the performance of their applications. In this article, we will discuss the IXTH36N50P\'s application field and working principle.
Application Field: The IXTH36N50P is an excellent choice for high-voltage, low-VCE(sat) N-channel power applications. It is commonly used for automotive applications, power conversion and management, industrial motor drives, high-power DC/DC converters, solar/photovoltaic applications and more. Due to its ruggedized design and reliable high-temperature operation, the IXTH36N50P is suitable for applications requiring harsh environmental conditions. Additionally, its low on-resistance and ultra low capacity makes it ideal for applications requiring low energy consumption and enhanced efficiency.
Working Principle: The IXTH36N50P is based on the latest TrenchFET technology and is a single, isolated N-channel power MOSFET device. This technology allows the device to support higher voltage and power applications while achieving low on-resistance characteristics. The IXTH36N50P works by using a MOSFET gate driving system, which helps to reduce switching losses and minimize power consumption, making the device extremely efficient. When the gate signal is applied to the IXTH36N50P, the gate turns on and draws current from the drain, allowing the current to flow between the source and the drain. This allows the MOSFET to control the amount of current flowing through, allowing for a more efficient operation.
The IXTH36N50P is a highly efficient device with a rugged design, making it an ideal choice for a broad range of high-voltage, low-VCE(sat) N-channel power applications. Its low on-resistance and ultra low capacity makes it suitable for applications requiring low energy consumption and enhanced efficiency. Additionally, the IXTH36N50P is based on the TrenchFET technology, allowing the device to support higher voltage and power applications while achieving low on-resistance characteristics. Ultimately, the IXTH36N50P is an exceptional choice for design engineers looking to maximize the performance of their applications.
The specific data is subject to PDF, and the above content is for reference
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