IXTH3N150 Allicdata Electronics
Allicdata Part #:

IXTH3N150-ND

Manufacturer Part#:

IXTH3N150

Price: $ 6.73
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1500V 3A TO-247
More Detail: N-Channel 1500V 3A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: IXTH3N150 datasheetIXTH3N150 Datasheet/PDF
Quantity: 1000
1 +: $ 6.73000
10 +: $ 6.52810
100 +: $ 6.39350
1000 +: $ 6.25890
10000 +: $ 6.05700
Stock 1000Can Ship Immediately
$ 6.73
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.3 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 1500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH3N150 is a Single Field Effect Transistor, often abbreviated as a FET. This type of transistor is used in a variety of applications, such as power regulation and switching, and is especially useful in high-power applications due to its sturdy construction. This transistor is designed for very low in-circuit impedances, meaning it has a high frequency response and is able to handle larger signals, making it a reliable component for voltage and current control. In addition, the IXTH3N150 has a very low on-resistance, meaning it is able to provide consistent performance over a wide temperature range.

The IXTH3N150 FET is able to work in a variety of ways. It can be used as a voltage-controlled switch, allowing for very brief switching times, or as a controlled current source, allowing it to be used as a power amplifier or power converter. The FET is also able to be used as a current-controlled switch, acting as a high speed, low current switch that can provide a fast and efficient switching function.

The working principle behind the IXTH3N150 is simple to understand. This type of transistor consists of a gate, source, and drain. When a positive voltage is applied to the gate, it allows current to flow from the source to the drain. This causes the resistance between the source and drain to increase, and when the gate voltage is removed, the resistance decreases. This change in the resistance is the basis for how the IXTH3N150 works.

The IXTH3N150 is used in applications such as motor control, DC-DC converters, power amplifiers, and motor speed control. The FET is also used in LED and laser drivers, arc-fault circuit breakers, and solar panel controllers. In each of these applications, the IXTH3N150 is able to provide excellent performance, due to its low resistance and fast switching times.

The IXTH3N150 is specifically designed as a high-power transistor and has a variety of features to make it ideal for these types of applications. Firstly, it is capable of handling large amounts of power when compared to other similar FETs, meaning it can easily handle the demands of high-power devices. In addition, the IXTH3N150 has very low on-resistance, meaning it can provide consistent performance across a wide temperature range. Finally, the IXTH3N150 has a very fast response time, meaning it is able to switch rapidly when needed.

In conclusion, the IXTH3N150 is an excellent choice for high-power applications due to its low on-resistance, fast switching times, and high frequency response. It is a reliable and efficient component, and is ideal for applications such as motor speed control and power regulation.

The specific data is subject to PDF, and the above content is for reference

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