IXTH60N30T Allicdata Electronics
Allicdata Part #:

IXTH60N30T-ND

Manufacturer Part#:

IXTH60N30T

Price: $ 3.49
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 60A TO-247
More Detail: N-Channel 300V 60A (Tc) Through Hole TO-247 (IXTH...
DataSheet: IXTH60N30T datasheetIXTH60N30T Datasheet/PDF
Quantity: 1000
30 +: $ 3.14622
Stock 1000Can Ship Immediately
$ 3.49
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH60N30T transistor is a powerful device that is used in various applications. It is a single-channel insulated gate bipolar transistor (IGBT) with a wide range of tremendous performance ranges. In this article, we shall discuss the IXTH60N30T application field and working principle.

IXTH60N30T Applications

The IXTH60N30T available in TO-220F package is a silicon N-channel IGBT with providing superior switching capabilities and power density. It features an optimised low-on-resistance that gives controlled switching transition and ZERO switching delays. It can easily handle high-current and high-voltage with load up to 30A and 600V DC.

IXTH60N30T is widely used in various applications like motor drivers which involve frequent switch between low and high power, solar inverter that provides energy for the households, DC power applications like electric heating. Other than that, IXTH60N30T transistor can be used in high voltage switching in AC lines or DC lines, providing variable power in an adjustable power supply, as well as in voltage-controlled switches.

IXTH60N30T Working Principle

The IXTH60N30T transistor is composed of an insulated-gate bi-polar transistor (IGBT) and its gate field-effect transistor (FET). IGBTs are widely used in power switching devices due to their advantages such as high blocking voltage and low on-state voltage resistance. It is popular for electric motor drive applications. Furthermore, it is also popular for driving high power transistors.

The IXTH60N30T transistor works by combining the advantages of both bipolar transistors and FETs. It consists of an IGBT and a FET connected in the same package. The IGBT acts as the active device in the circuit where it controls the flow of current across it. Meanwhile, the FET is used as the input transistor of the circuit where it acts as a switch and enables the IGBT. In a nutshell, the IXTH60N30T transistor offers tremendous power switching capabilities in a small package.

Conclusion

In conclusion, the IXTH60N30T transistor offers a wide range of performance ranging from low-on-resistance to high-current and high-voltage handling capabilities. It can easily be used in various applications such as motor drivers, solar inverters, electric heating and adjustable power supplies. Moreover, it is composed of an IGBT and a FET that works together to provide controlled switching and excellent power switching performance.

The specific data is subject to PDF, and the above content is for reference

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