IXTH6N90A Allicdata Electronics
Allicdata Part #:

IXTH6N90A-ND

Manufacturer Part#:

IXTH6N90A

Price: $ 6.64
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 900V 6A TO-247
More Detail: N-Channel 900V 6A (Tc) 180W (Tc) Through Hole TO-2...
DataSheet: IXTH6N90A datasheetIXTH6N90A Datasheet/PDF
Quantity: 1000
1 +: $ 6.64000
10 +: $ 6.44080
100 +: $ 6.30800
1000 +: $ 6.17520
10000 +: $ 5.97600
Stock 1000Can Ship Immediately
$ 6.64
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH6N90A is a high-speed IGBT (insulated gate bipolar transistor) developed by Infineon. This type of transistor is versatile and used in switching and power management applications. It is primarily used for medium to high power control in a circuit. This article will discuss the IXTH6N90A application field and working principle.

Application Field

The IXTH6N90A offers a variety of benefits which make it an attractive choice for applications such as:

  • High-power switching applications
  • Motor control
  • Smoothing out power control
  • Converting and controlling AC/DC power
  • LCD/LED display control

It is well suited for applications that require high power or high efficiency, such as electric vehicles and motor controls, as well as many industrial applications. It is also suitable for deployment in high-speed optical communications systems.

Working Principle

The IXTH6N90A works on the principle of voltage controlled bipolar transistor, where both n-channel and p-channel transistors are combined to form a single device. The IGBT has two terminals – the collector and the emitter, as well as a gate. The current flow is from collector to emitter and is controlled by the voltage applied to the gate. When the gate voltage is zero, no current flows. When the gate voltage is increased, the current flow is increased as well. The voltage that controls the current is usually limited to 10V and the operating temperature can range from -55°C to 125°C.

The IXTH6N90A is capable of carrying currents up to 400A and voltages of up to 600V. This makes it suitable for high-power switching applications and motor control. It also features a fast-switching speed and good thermal reliability, making it a reliable choice for many high-power applications.

Conclusion

In conclusion, the IXTH6N90A is a versatile transistor that is suitable for a wide range of applications, including high-power switching, motor control, and smoothing out power control. It is also capable of carrying currents up to 400A and voltages of up to 600V at temperatures of -55°C to 125°C. It offers excellent fast-switching speeds and good thermal reliability. This makes it an excellent choice for industrial and automotive applications, as well as many other high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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