| Allicdata Part #: | IXTH6N90A-ND |
| Manufacturer Part#: |
IXTH6N90A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 900V 6A TO-247 |
| More Detail: | N-Channel 900V 6A (Tc) 180W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTH6N90A Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH6N90A is a high-speed IGBT (insulated gate bipolar transistor) developed by Infineon. This type of transistor is versatile and used in switching and power management applications. It is primarily used for medium to high power control in a circuit. This article will discuss the IXTH6N90A application field and working principle.
Application Field
The IXTH6N90A offers a variety of benefits which make it an attractive choice for applications such as:
- High-power switching applications
- Motor control
- Smoothing out power control
- Converting and controlling AC/DC power
- LCD/LED display control
It is well suited for applications that require high power or high efficiency, such as electric vehicles and motor controls, as well as many industrial applications. It is also suitable for deployment in high-speed optical communications systems.
Working Principle
The IXTH6N90A works on the principle of voltage controlled bipolar transistor, where both n-channel and p-channel transistors are combined to form a single device. The IGBT has two terminals – the collector and the emitter, as well as a gate. The current flow is from collector to emitter and is controlled by the voltage applied to the gate. When the gate voltage is zero, no current flows. When the gate voltage is increased, the current flow is increased as well. The voltage that controls the current is usually limited to 10V and the operating temperature can range from -55°C to 125°C.
The IXTH6N90A is capable of carrying currents up to 400A and voltages of up to 600V. This makes it suitable for high-power switching applications and motor control. It also features a fast-switching speed and good thermal reliability, making it a reliable choice for many high-power applications.
Conclusion
In conclusion, the IXTH6N90A is a versatile transistor that is suitable for a wide range of applications, including high-power switching, motor control, and smoothing out power control. It is also capable of carrying currents up to 400A and voltages of up to 600V at temperatures of -55°C to 125°C. It offers excellent fast-switching speeds and good thermal reliability. This makes it an excellent choice for industrial and automotive applications, as well as many other high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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