| Allicdata Part #: | IXTH75N15-ND |
| Manufacturer Part#: |
IXTH75N15 |
| Price: | $ 5.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 150V 75A TO-247 |
| More Detail: | N-Channel 150V 75A (Tc) 330W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH75N15 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 5.89000 |
| 10 +: | $ 5.71330 |
| 100 +: | $ 5.59550 |
| 1000 +: | $ 5.47770 |
| 10000 +: | $ 5.30100 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH75N15 is an insulated-gate bipolar transistor with a maximum drain-source voltage of 600 V. This device is designed for applications where high-power performance and low on-resistance is desired. It is a great choice for dc-to-dc conversion, motor control, and driving applications that require higher voltage and current than standard FETs.
The IXTH75N15 uses a single insulated gate to control the current and voltage of the device. When a voltage is applied to the gate, it creates a field that attracts the electrons within the device and creates a current. This current allows for the control of the device’s output.
The IXTH75N15 has a drain-source on-resistance of 65 mΩ and a maximum drain-source current rating of 75 A. This makes it especially suitable for high-voltage, high-current applications. It also has a high breakdown voltage of 600 V and a high avalanche voltage of 1200 V.
The IXTH75N15 is ideal for use in applications where a high-power and efficient MOSFET is needed. This includes applications such as motor control, DC-DC converters, and power conversion circuits. Furthermore, its low on-resistance makes it suitable for high-power and high-current applications.
The IXTH75N15 is also useful in applications that require fast switching times and low switching losses. Its low on-resistance also reduces power loss in the device and improves efficiency.
The IXTH75N15 is an ideal device for many applications due to its low on-resistance, high avalanche voltage, and high current handling capability. Its low on-resistance makes it suitable for high-voltage, high-current applications and its high avalanche voltage and current handling capability make it suitable for power conversion circuits. Its fast switching speeds and low switching losses make it ideal for applications that require high-power performance and efficient operation.
The specific data is subject to PDF, and the above content is for reference
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