Allicdata Part #: | MRF5P21240HR5-ND |
Manufacturer Part#: |
MRF5P21240HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI-1230 |
More Detail: | RF Mosfet LDMOS 28V 2.2A 2.11GHz ~ 2.17GHz 13dB 52... |
DataSheet: | MRF5P21240HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.11GHz ~ 2.17GHz |
Gain: | 13dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 2.2A |
Power - Output: | 52W |
Voltage - Rated: | 65V |
Package / Case: | NI-1230 |
Supplier Device Package: | NI-1230 |
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MRF5P21240HR5 is an advanced radio frequency (RF) power field-effect transistor (FET). It is a laterally diffused metal oxide semiconductor (LDMOS) transistor that operates in the 2.1 – 2.4 GHz frequency range. It is used in a variety of high-power applications, such as radar, communications, and military systems.
The MRF5P21240HR5 is designed for operation in S-band and is suitable for use as a high-power amplifier. It has a peak output power of 250 watts and can operate at a frequency of up to 2.4 GHz with a maximum current of 5.1 A. It also has a high gain of 26.3 dB, making it suitable for applications that require a high-power output.
The MRF5P21240HR5 has an input impedance of 50 ohms and an output impedance of 25 ohms. It is also designed for use in 50 ohm systems, so it can easily be integrated into existing designs. Additionally, it is RoHS compliant and UL/CSA approved.
The MRF5P21240HR5 is a laterally diffused metal oxide FET. It has a grounded source and drain, making it easier to use in circuits than other FETs. Additionally, it has good heat dissipation, which helps to maximize the transistor’s performance. The device has excellent uniformity, which makes it a great choice for high-power applications.
The MRF5P21240HR5 utilizes a metal saturation process, which allows for higher current carrying capabilities than other RF FETs. This process also minimizes excessive gate leakage, which can cause unwanted noise and reduce power gain. Additionally, the low on-resistance of the device makes it efficient and reduces the amount of power required to achieve the desired output power.
The MRF5P21240HR5 is designed for use in amplifiers and other high-power applications. Its high power output, low on-resistance, and good uniformity make it a great choice for many different RF applications. It is also RoHS compliant and UL/CSA approved, so it can be used in commercial applications.
In summary, the MRF5P21240HR5 is an excellent choice for high-power RF applications. Its low on-resistance and high power output make it suitable for amplifier designs and other applications that require a high level of performance. Additionally, it is RoHS compliant and UL/CSA approved, so it can be used in commercial applications.
The specific data is subject to PDF, and the above content is for reference
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