MRF5S19130HR3

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The MRF5S19130HR3 is a high power, N-channel, laterally diffused metal oxide field effect transistor (LDMOSFET). It is developed and manufactured by Freescale Semiconductor (formerly Motorola Semiconductor). Its maximum power of 1,300 Watts makes it suitable for use in a variety of radio frequency (RF) applications.

The MRF5S19130HR3 is constructed using a silicon chip with a single loop current path, or gate-source-drain, or drain-source-gate configuration. It is composed of two half cells sharing a common gate, with a total of two elements. The drain-source path is composed of an integrated deep-trench trench with a high aspect ratio and a low gate resistance. The gate widths of the two cells are designed to improve thermal stability.

The MRF5S19130HR3 provides excellent reliability in terms of its saturation voltage and maximum drain current, allowing for a wide range of applications. Its high performance, combined with its wide operating range, makes it a great choice for use in a variety of RF applications, ranging from radio broadcasting, cellular communication systems, and digital video broadcasting, to radar and high-frequency networks.

The working principle behind the MRF5S19130HR3 is based on the Channel Lower Saturation Voltage, or C-Voltage, mode. This mode is based on the voltage applied to the gate of the device. When the gate voltage is below the C-Voltage, the drain current is low, maintaining a low power consumption. When the gate voltage exceeds the C-Voltage, the device is turned on and drain current begins to increase, allowing for maximum power consumption.

The MRF5S19130HR3 was designed to be used in high power applications such as radio broadcasting, satellite broadcasting, and radar systems. It can also be used in automotive and medical applications, and in industrial and IoT applications. The MRF5S19130HR3 is an ideal device for applications where reliable, high power performance is required.

In conclusion, the MRF5S19130HR3 is a high-power, N-channel, LDMOSFET that is suitable for a wide range of RF applications. Its high performance, combined with its wide operating range, makes it an ideal choice for applications where reliable, high power performance is needed. Its C-Voltage operation mode helps maintain a low power consumption, making it an excellent choice for many RF applications.

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