MRF5P21180HR6

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The MRF5P21180HR6 is a normally-on integrated power field-effect transistor (FET) specifically engineered for use as a high-power RF switch in a wide variety of applications. This unit is powered by Silicon Products’ proprietary enharch technology, which combines advanced process geometry and advanced packaging to deliver improved performance and flexibility in difficult to drive systems. By combining this enhanced technology with a structure designed to maximize the transconductance of the FET, it is ideal for applications that require both high-power and high frequency capabilities.

The MRF5P21180HR6 is equipped with state-of-the-art peak current driving capabilities for high-power RF switching, as well as high frequency operation. This FET has been tested up to 2.5GHz, but can reach higher frequencies, depending on the systems it is used with. It is rated for 900mW of output power, making it ideal for use in demanding portable, military and aerospace applications.

The MRF5P21180HR6 utilizes an integrated power field-effect transistor (FET) with a single HEMT device built into the package. In FETs, electrons are moved between the voltage source and the substrate, resulting in much higher frequencies than those seen in MOSFETs. Additionally, the current confinement in the FET structure allows the MRF5P21180HR6 to be operated at higher power levels than standard MOSFETs, making it ideal for use in high-power applications.

The HEMT design also lends itself well to use in RF applications. This FET utilizes a unique three-terminal configuration for improved device stability, which is important during high-frequency operations. The packaging also offers easy mounting to conductive or non-conductive materials, allowing for minimal board space requirement and quick installation.

The MRF5P21180HR6 is designed to provide reliable switching performance in a broad range of applications, with high switching speeds, low power consumption and high immunity to noise. Since the device offers an integrated architecture, it is able to maintain a high performance while minimizing board size. Its peak power rating of 900mW also makes it ideal for wireless applications that require high power levels, including satellite transceiver systems, base station transmitters, and mobile phones.

In summary, the MRF5P21180HR6 is an ideal choice for applications requiring a high-power, high-frequency RF switch. Built on Silicon Products’ proprietary enharch technology, this field-effect transistor is efficiently designed to offer high peak current driving capabilities, delivering superior performance in demanding applications. With its low power consumption and reliable switching performance, it is an excellent choice for a variety of applications.

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