MRF5P20180HR6

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	1.93GHz ~ 1.99GHz
Gain:	14dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.6A
Power - Output:	38W
Voltage - Rated:	65V
Package / Case:	NI-1230
Supplier Device Package:	NI-1230

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Overview of MRF5P20180HR6

The MRF5P20180HR6 is a N-channel RF FET designed for general-purpose RF applications. This device offers superior gain and power performance across a broad frequency range. The device\'s excellent linearity makes it suitable for digital and analog RF applications, including transmitters, receivers, and digital equipment.

Features

The MRF5P20180HR6 offers excellent gain, power, and linearity, making it appropriate for applications such as:-General-purpose radio communication systems-High-power radio transmitters-Telemetry, RFID, and cordless phone-Digital and analog radio communication systems-Lead-free, RoHS compliant

Performances

The MRF5P20180HR6 provides exceptional performance in a wide range of applications. The average power gain on the device is 16.5 dB with a maximum drain efficiency of 50%. The operating frequency range is 2-200 MHz, and the maximum power output is 30 watts. The typical input impedance is 50 ohms, and the maximum input voltage is 50 volts.

Application Field and Working Principle

The MRF5P20180HR6 is a versatile FET that is used broadly to amplify and switch signals in various radio applications. It is commonly used in radio receivers as an intermediate frequency (IF) amplifier, in transmitters as a driver, and in general-purpose RF applications. The device operates with a two-terminal source and a three-terminal gate. The source is connected to the drain and the gate to the drain in a source follower configuration. When the gate voltage is applied, electrons from the source are attracted to the region of the drain and then flow through the transistor, creating an amplified signal. The amplified signal is used to control the transmitter or receiver and can also be used to switch circuits on or off. The MRF5P20180HR6 requires a specific bias voltage to be applied at the gate and source to create the desired level of current flow. It is also important to ensure proper ventilation and keep the device at a safe operating temperature.

Conclusion

The MRF5P20180HR6 is a versatile FET device that is widely used in a variety of RF applications. It offers a wide range of benefits, including excellent gain, power, and linearity. The device requires a bias voltage to be applied at the gate and source for optimal performance. In addition, proper ventilation and protection from over-temperature must be in place to ensure safe operation. Ultimately, the MRF5P20180HR6 is an ideal choice for a variety of digital and analog radio communication systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description