MRF5S19090HSR3

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MRF5S19090HSR3 is a depletion mode N-Channel RF power transistor designed for amplifying linear applications. With an output power of 16W, it offers high gain, low drain efficiency and very low distortion. This device is suitable for any type of RF or microwave application, such as base stations, catalytical converters and automotive applications.

Applications

MRF5S19090HSR3 RF power transistor is mainly used in applications requiring a high linearity, high efficiency, and high output power such as:

• RF Amplification
• Cellular Radio
• Base Station Applications
• Catalytical Converters
• Automotive Systems
• Audio Amplification

Features

• High Linearity
• High Efficiency
• High Output Power
• Low Drain Efficiency
• Very Low Distortion

Working Principle

The MRF5S19090HSR3 RF power transistor uses an N-Channel metal-oxide-semiconductor field-effect transistor. This is an active component that can be used as a switch, amplifier, or as a logic component. A MOSFET is a four-terminal component, with source and drain terminals connected to a conductive layer (channel) and a gate terminal connected to a control voltage.

When a suitable voltage is applied across the gate and source terminals, the MOSFET will conduct a current through the channel. This is known as the transistor’s “on” state. Adjusting the voltage applied to the gate will cause the transistor to increase or decrease the amount of current flowing through the channel. This makes the MOSFET an effective switch device.

The MRF5S19090HSR3 transistor is designed to operate as a linear amplifier, offering high linearity and low distortion. The transistors embedded in this device are capable of providing amplification of an input signal with minimal alteration or distortion of the signal\'s waveform. This makes the device ideal for use in audio and other applications requiring maximum fidelity.

The MRF5S19090HSR3 is also designed to offer maximum efficiency, providing high output power from very low input power. This makes the device ideal for use in battery-powered and energy-saving applications.

Conclusion

MRF5S19090HSR3 is a depletion mode N-Channel RF power transistor suitable for any type of RF or microwave application, such as base stations, catalyctic converters and automotive applications. It offers the user high gain, low drain efficiency, and very low distortion, making it an ideal choice for RF amplification, audio amplification, and other applications requiring high linearity and high efficiency.

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