MRF5S21100HR5

MRF5S21100HR5 is a RF power transistor(field-effect transistor) which belongs to the family of high-power RF MOSFET devices. It is a laterally diffused metal-oxide-semiconductor (LDMOS) transistors that is extensively used in commercial and defense electronics and communications applications. This type of transistor has found widespread use in areas such as amateur radio, television, mobile radio and mobile telephony.

MRF5S21100HR5 is especially suitable for high power linear applications in the 50 - 1000 MHz range due to its high breakdown voltage, high drain voltage, and high current drawn capability. It is a reliable device that can be used in many different applications such as handheld radios, TVs, VHF communication systems, short-haul radios, HF transmitters, radar and satellite communication systems. Other applications include base stations, personal computers, and various types of industrial and automotive systems.

Working principle of the MRF5S21100HR5 transistor is based on the principle of FET (field-effect transistor). It is a three-terminal solid-state device comprised of an n-type semiconductor channel, two source-drain electrodes, and a gate electrode. The n-type channel region is negatively biased by a voltage applied to the drain and source electrodes, creating a depletion layer between the two electrodes and reducing the number of free carriers in the channel. The depletion layer forms a barrier that serves as a field-effect until the gate electrode is positively-biased relative to the source and drain. This in turn causes the channel to become heavily doped and a current can flow through the channel. The width of the channel varies with the applied voltage and is inversely proportional to the magnitude of the voltage applied to the gate electrode. Therefore, the current flowing between the source and the drain electrodes is controlled by the voltage applied to the gate electrode. The working of the transistor is further determined by the type of semiconductor material used, the drain to source voltage, the threshold voltage, and the on-state resistance.