| Allicdata Part #: | MRF8372R1-ND |
| Manufacturer Part#: |
MRF8372R1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 16V 200MA SO8 |
| More Detail: | RF Transistor NPN 16V 200mA 870MHz 2.2W Surface Mo... |
| DataSheet: |  MRF8372R1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 16V |
| Frequency - Transition: | 870MHz |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | 8dB ~ 9.5dB |
| Power - Max: | 2.2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 5V |
| Current - Collector (Ic) (Max): | 200mA |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
Description
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MRF8372R1 is a type of transistor, a bipolar junction transistor (BJT) to be more specific, that is especially designed for RF (radio frequency) applications. It is actually MOSFETs that are commonly used for RF applications and the MRF8372R1 is no exception; however, it is unique and more special because it is tailored to work more specifically for the dedicated field. It can be found mostly in high-frequency and medium-power communication circuits that are used in radio transceivers such as those used in cell phones, Wi-Fi modules, Bluetooth modules, etc.The MRF8372R1 offers an added advantage with its resulting resistance, which decreases as the frequency of the RF signal increases. It is also very resistant to temperature fluctuations, making it usable in various sorts of environments.The main principles behind the working of the MRF8372R1 are based on a certain level of current flowing through its three terminals, namely emitter, base, and collector. The operation can be mostly divided into two stages: the forward active (or saturation) region, and the cut-off region.In the forward active region, a large current flows from the collector to the emitter. This is caused by the current from the base to the emitter, which is amplified by the transistor\'s amplification factor. This current then flows from the collector to the emitter, resulting in the output.In the cut-off region, however, the transistor does not conduct at all. This is because there is a very small current from the base to the emitter, which is not enough to turn the transistor on. Thus, the transistor is inactive, resulting in no current flowing from the collector to the emitter.The MRF8372R1\'s 3rd order intercept point (IP3) is very high, usually ranging from 30-35 dBm, so it can operate at much stronger inputs without signs of distortion or abrupt power dynamics. This will greatly help with the sound quality of an audio system or output of a radio broadcast module.It is best suited for use in wireless modules, radio transceivers, satellite TV receivers, and other RF applications that require high-frequency and medium-level power. It also does well in high temperature operation and has a low noise parameter to minimize distortion.So, in essence, the MRF8372R1 is a BJT technology transistor, especially suited for RF applications due to its unique resistance ability, temperature fluctuation immunity, high 3rd-order intercept point, and low-noise parameter. This allows its use in a variety of RF circuits, ranging from cell phone transceivers to satellite TV receivers. Its usage in these applications makes it one of the most popular and widely used transistors for RF circuits.
The specific data is subject to PDF, and the above content is for reference
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