Allicdata Part #: | MRF8HP21080HR5-ND |
Manufacturer Part#: |
MRF8HP21080HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.17GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 150mA 2.17GHz 14.4dB 16... |
DataSheet: | MRF8HP21080HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.17GHz |
Gain: | 14.4dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 16W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8HP21080 |
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The MRF8HP21080HR5 is a high-power field-effect transistor (FET) IC specifically designed to operate as an RF power amplifier. This IC is ideal for applications where a wide range of power levels and frequencies are required, such as broadcasting, cable TV, and Wi-Fi communications. The MRF8HP21080HR5 is widely used for commercial and industrial applications, due to its high-power rating and its reliability in the RF environment.
The MRF8HP21080HR5 is constructed using high-end Gallium Arsenide (GaAs) process technology. This process technology is often preferred over traditional Silicon process technology due to the semiconductor\'s increased speed and performance in RF applications. The MRF8HP21080HR5 has a maximum output power of 210 Watts, with a maximum Operating Frequency of up to 8.0GHz. This IC is characterized with exceptionally high gain, and high input and output impedance for excellent linearity, as well as improved noise figure performance. The device is designed for DC supply voltage, with an operating range of 9 to 24V.
The MRF8HP21080HR5 operates in an RF environment by controlling electrical current. It does this by using a gate, the control element of the FET, to control the flow of electrons through the transistor. The gate voltage is used to control the current, and when the gate voltage is increased, the current increases. When the gate voltage is decreased, the current decreases. This makes the MRF8HP21080HR5 an ideal choice for applications requiring great precision, since the current can be controlled with very fine accuracy.
The MRF8HP21080HR5 also offers excellent power efficiency, the power used to produce the frequency is kept to a minimum while still providing the desired level of RF output. This feature makes it extremely cost-effective and energy efficient, making it the preferred choice for many commercial and industrial applications. This device also features a low noise figure, making it very suitable for applications such as in noise-sensitive environments. Overall, the MRF8HP21080HR5 is an excellent choice for a wide range of applications due to it\'s high-power rating, low noise figure, excellent power efficiency, and its ability to operate up to 8.0GHz.
The specific data is subject to PDF, and the above content is for reference
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