MRF8S23120HR3

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The MRF8S23120HR3 is a RF power MOSFET composed of three sections: an insulation layer, an active junction and a metallized source. It is a desitinationally designed device with characteristics in the RF power category, that extends the existing RF power MOSFET product range. It is well suited for use in radio-frequency applications that require optimized performance at VDS=50V and ID=1.2A.

The MRF8S23120HR3 is a high current insulated gate type field-effect transistor. It has two regions: a source region and a drain region. Between these two areas there is a gate oxide layer. This oxide layer is connected to the drain region, which is the positive voltage potential, and the source region, which is the negative voltage potential. An adjustable current is applied to the gate to control the current flow between the drain and source resulting in a MOSFET device.

The RF drift frequency of this device is 8W, it has a breakdown voltage of 37V, and a maximum drain current of 1.2A.The RF gain is 8.1 dB, and the noise figure is 6.9 dB. The gate-drain capacitance is 720 pF, and the input and output impedance are 50Ω. Its total gate charge is 37 nC and its utmost junction temperature is 150°C.

The MRF8S23120HR3 operates between 50V and 8W. The device offers an extremely low noise RF power amplifier section and a wide tuning range over the entire frequency range. The device also features extremely low input capacitance, allowing for greater power output. It is suitable for most RF applications including radar, communication systems, transceivers, base stations and marine radars.

The working principle of the MRF8S23120HR3 is as follows: the gate-source voltage draws a current from the drain-source thereby reducing the VDS across the device. This process creates a channel in the insulated gate FET, generating a resistance in the form of drain-source current. As the gate-source voltage increases, the drain-source current increases, thus increasing the resistance. This leads to higher drain-source voltage due to the power consumption in the device.

The MRF8S23120HR3 is an ideal device for radio-frequency power applications that require optimized performance and wide operating temperature range. Its combination of low capacitance, low noise and low on-resistance makes it suitable for medium power applications. Thanks to its excellent frequency drift performance, it is suitable for highly linear applications such as communication systems, base stations, and radar transmitters. As a result, it is also suitable for automotive electronic applications including motor control and navigation systems.

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