Allicdata Part #: | MRF8P20165WHSR3-ND |
Manufacturer Part#: |
MRF8P20165WHSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.01GHZ NI780S4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 550mA 1.98GHz ~ 2.01GHz... |
DataSheet: | MRF8P20165WHSR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.98GHz ~ 2.01GHz |
Gain: | 14.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 550mA |
Power - Output: | 37W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-4 |
Supplier Device Package: | NI-780S-4 |
Base Part Number: | MRF8P20165 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF transistors are devices that are used to amplify, switch, and modulate signal frequencies in radio-frequency applications. MRF8P20165WHSR3 is a power MOSFET transistor manufactured by NXP Semiconductors. It is designed to reduce gate charge while offering higher power handling. It is an N-channel power MOSFET which uses the same pinout as P2N2222. Its breakdown voltage is 200 V and its drain-source relatively low on-resistance provides high power-handling capability. The MOSFET also offers high breakdown voltage, making it suitable for use in applications such as DC-DC controllers, motor drivers, and SMPS.
The application fields of MRF8P20165WHSR3 mainly includes switching power supplies, motor drivers, AC-DC motors, and RF amplifier circuits. The on-resistance of MRF8P20165WHSR3 is very low which can be used in high power switching supplies and for motor control applications. The high breakdown voltage makes it suitable for use in applications that require high voltage control.
The working principle of MRF8P20165WHSR3 is similar to that of other MOSFETs. The MOSFET has a gate, drain, and source connection. When a voltage is applied to the gate terminal, the voltage on the drain and source terminals changes, allowing current to flow through the transistor. The current at the drain terminal is controlled by the voltage applied to the gate terminal. When the gate voltage is zero, the MOSFET is in the off state and there is no current in the drain and source terminals. When the gate voltage is increased, the on-resistance of the MOSFET decreases and more current can flow through the transistor.
Because of its high power handling capability and low on-resistance, MRF8P20165WHSR3 is suitable for use in high power applications. It is also suitable for use in wide range of RF amplifier circuits. The low on-resistance makes the MOSFET suitable for use in motor controllers and DC-DC converters as well. Thus, it is a versatile device that can be used in many applications.
The specific data is subject to PDF, and the above content is for reference
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