MRF8S21140HSR5

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MRF8S21140HSR5 is a MOSFET transistor series, developed by Freescale Semiconductor Corporation. It is a reliable high-speed heterojunction power transistor specially designed for radio frequency (RF) applications. The RF MOSFET features low-noise, high breakdown voltages, high gain and small size. It is available in a hermetically sealed flatpack or surface mount plastic package and is suitable for use in 3G and 4G mobile communication systems, as well as other types of high-frequency applications.

MRF8S21140HSR5 is designed for use in high-frequency amplifiers, power amplifiers, RF amplifiers and oscillators, high-power mixers, and broadband amplifiers. It can be used to produce signals in the 0.2 to 3 GHz frequency range. This RF MOSFET offers high breakdown voltages up to 70V for safe operation in high-voltage applications. It also offers low gate thresholds, making it suitable for applications such as phase-locked loops and frequency synthesizers. The MOSFET also features outstanding linearity and cross-device matching, making it suitable for precision applications such as RADAR, avionics, test and measurement, and satellite communication.

MRF8S21140HSR5 is a surface mount transistor with an exposed drain pad. It consists of a P-channel depletion mode vertical double-diffused MOSFET that is manufactured using Freescale\'s advanced epitaxial process. The device features an active cell layer, an n-Well, and a gate protection structure, which are all integrated in a single transistor cell. The device has three pins, with two pins for the source of the MOSFET, and one for the drain. The gate is either connected to the source or left floating, depending on the type of application.

The working principle of the MRF8S21140HSR5 is fairly simple. The MOSFET is placed between the source and the drain and the gate is used to control the flow of carriers through the channel. The gate bias is typically set lower than the source, and when the gate bias is increased, carriers are injected into the channel. This creates an inversion layer, allowing for more current to flow through the channel. When the gate bias is decreased, the carriers are removed from the channel, reducing the current flow to nearly zero. This MOSFET can be used in a variety of applications, such as in RF amplifiers and oscillators, broadband amplifiers, power amplifiers, and mixers.

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