Allicdata Part #: | MRF8P23080HSR3-ND |
Manufacturer Part#: |
MRF8P23080HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.3GHZ NI780S-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 280mA 2.3GHz 14.6dB 16W... |
DataSheet: | MRF8P23080HSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.3GHz |
Gain: | 14.6dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 280mA |
Power - Output: | 16W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-4 |
Supplier Device Package: | NI-780S-4 |
Base Part Number: | MRF8P23080 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MRF8P23080HSR3 is a Field Effect Transistor (FET) specifically designed for Radio Frequency (RF) applications. It has a N-Channel Enhancement Mode configuration, with integrated depletion-type body diode, that can be used as a switch in low noise amplification, and other signal processing applications.
A FET is a three-terminal device similar in operation to a vacuum tube, with the cathode replaced by a gate terminal. A FET acts as an amplifier by controlling gain with a varying electrical signal applied to the gate. A MOSFET is a type of insulated-gate field-effect transistor (IGFET) which acts in a similar manner, but contains multiple channels. The MRF8P23080HSR3 is a MOSFET, with an N-Channel type.
The MRF8P23080HSR3 has a wide range of applications that include RF amplifiers, RF switches, RF signal routing, and RF signal processing. It is commonly used in applications such as wireless base transceiver stations, wireless repeaters, wireless cellular systems, wireless microphones and low noise amplifiers.
The working principle of the MRF8P23080HSR3 is fairly simple. The positive terminal of the electric signal applied to the gate crosses through a thin oxide layer on the MOSFET, connecting a negative terminal to the N-Channel. This creates a depletion region and reduces the current flow from the N-Channel to the P-Channel, thus acting as a switch that can be used to turn off and on the current moving from the N-Channel.
The MRF8P23080HSR3 features a low turn-on voltage of -4V, a high on/off ratio of 33, and a maximum drain current (Id) of 8A, making it an ideal choice for many RF applications. Additionally, it has low gate charge, and a wide operating temperature range of -55°C to +175°C. These features make the MRF8P23080HSR3 a reliable and durable choice for a variety of RF applications.
In conclusion, the MRF8P23080HSR3 is a reliable and durable MOSFET designed specifically for low noise amplification and other RF applications. It is commonly used in applications such as wireless base transceiver stations, wireless repeaters, wireless cellular systems, wireless microphones, and low noise amplifiers. The device operates by reducing the current flow from the N-Channel to the P-Channel when a positive signal is applied to the Gate, thus acting as a switch. Along with its low turn-on voltage, a high on/off ratio, and a wide operating temperature range, these features make the MRF8P23080HSR3 an ideal choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRF8S21100HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI780S... |
MRF8S9120NR3 | NXP USA Inc | -- | 250 | FET RF 70V 960MHZ QM780-2... |
MRF8P9040GNR1 | NXP USA Inc | 11.99 $ | 1000 | FET RF 2CH 70V 960MHZ TO-... |
MRF8P9040NR1 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ TO2... |
MRF8HP21080HR3 | NXP USA Inc | 35.32 $ | 1000 | FET RF 2CH 65V 2.17GHZ NI... |
MRF8S7170NR3 | NXP USA Inc | 48.33 $ | 1000 | FET RF 70V 748MHZ OM780-2... |
MRF8S9200NR3 | NXP USA Inc | -- | 1000 | FET RF 70V 940MHZ OM780-2... |
MRF8P9210NR3 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ OM7... |
MRF8S18120HSR3 | NXP USA Inc | 62.35 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8P20140WHR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8P20140WHSR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8P20140WGHSR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8S7235NR3 | NXP USA Inc | 66.77 $ | 1000 | FET RF 70V 728MHZ OM780-2... |
MRF8S9232NR3 | NXP USA Inc | 68.14 $ | 1000 | FET RF 70V 960MHZ OM780-2... |
MRF8S18210WGHSR3 | NXP USA Inc | 71.47 $ | 1000 | FET RF 65V 1.93GHZ NI880X... |
MRF8S18210WHSR3 | NXP USA Inc | 71.47 $ | 1000 | FET RF 65V 1.93GHZ NI880X... |
MRF8S9220HSR3 | NXP USA Inc | -- | 1000 | FET RF 70V 960MHZ NI780SR... |
MRF8P20165WHR3 | NXP USA Inc | 74.91 $ | 1000 | FET RF 2CH 65V 2.01GHZ NI... |
MRF8P20165WHSR3 | NXP USA Inc | -- | 1000 | FET RF 2CH 65V 2.01GHZ NI... |
MRF8S9170NR3 | NXP USA Inc | -- | 1000 | FET RF 70V 920MHZ OM780-2... |
MRF8VP13350NR3 | NXP USA Inc | 94.11 $ | 1000 | TRANS RF LDMOS 350W 50VRF... |
MRF8VP13350GNR3 | NXP USA Inc | 95.33 $ | 1000 | TRANS RF LDMOS 350W 50VRF... |
MRF8P8300HR6 | NXP USA Inc | 99.06 $ | 1000 | FET RF 2CH 70V 820MHZ NI1... |
MRF8P8300HSR6 | NXP USA Inc | 99.06 $ | 1000 | FET RF 2CH 70V 820MHZ NI1... |
MRF8VP13350NR5 | NXP USA Inc | 136.5 $ | 1000 | RF POWER LDMOS TRANSISTOR... |
MRF8P9300HSR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ NI-... |
MRF8P29300HR6 | NXP USA Inc | 249.81 $ | 1000 | FET RF 2CH 65V 2.9GHZ NI1... |
MRF8P29300HSR6 | NXP USA Inc | 250.43 $ | 1000 | FET RF 2CH 65V 2.9GHZ NI1... |
MRF8372 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372G | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372GR1 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372GR2 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372R1 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372R2 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372MR1 | Microsemi Co... | -- | 1000 | TRANS NPN 16V 200MARF Tra... |
MRF8S18120HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S18120HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S18120HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S9100HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 70V 920MHZ NI-780R... |
MRF8S9100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 70V 920MHZ NI-780R... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...