MRF8HP21080HSR3

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The MRF8HP21080HSR3 is a type of RF MOSFET used in radio frequency (RF) applications. It is a high-voltage, high-frequency, normally-on MOSFET designed to withstand wide temperature and voltage ranges. This makes it ideal for applications such as low-noise amplifiers, filters, switches and RF power amplifiers.

The MRF8HP21080HSR3 contains several features that make it well-suited for RF applications. It has internal ESD diode protection, which helps to protect against ESD damage and reduce downtime. Additionally, the MRF8HP21080HSR3 has a wide variety of possible configurations, allowing a high degree of customisation for different applications. These features make the MRF8HP21080HSR3 a reliable and versatile device for a wide range of RF applications.

The MRF8HP21080HSR3 is a normally-on MOSFET. Normally-on MOSFETs are designed to remain in an \'ON\' state when no control signal is applied. The current flows in only one direction, from the drain to the source. When a control signal is applied, the MOSFET is switched \'OFF\', and the current flow ends. This makes the MOSFET ideal for applications such as power switching, where it is necessary to switch a high-power device on and off quickly and reliably.

The MRF8HP21080HSR3 is designed to be used in high-power RF applications. It has a drain-source voltage of 150V, and a maximum drain current of 80A. The device is capable of operating at high frequencies up to 12GHz, making it suitable for a variety of RF applications such as amplifiers and filters.

The MRF8HP21080HSR3 is a versatile device that can be used in a variety of different applications. As it is capable of operating at high frequencies and high power, it is well-suited for use in high-power RF applications such as RF amplifiers, filters and power switches. Additionally, the device’s flexible configurations and ESD protection make it ideal for applications where reliability and customisation are required.

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