Allicdata Part #: | MRF8P26080HR3-ND |
Manufacturer Part#: |
MRF8P26080HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.62GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 300mA 2.62GHz 15dB 14W ... |
DataSheet: | MRF8P26080HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.62GHz |
Gain: | 15dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 14W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8P26080 |
Description
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MRF8P26080HR3 is a Field Effect Transistor (FET) from the RF MOSFET family manufactured by Freescale Semiconductor. It is an RF power amplifier and is meant for use in GSM, EDGE, W-CDMA, and WiMax applications. This FET is a part of the PHEMT series and is used as a Wideband amplifier for medium to large signal amplifications. The other two types of amplifiers in RF MOSFETs are the Pulsed FETs and the Switched FETs. The main application field of the MRF8P26080HR3 is in cellular networks. It is used in base station antennas and small cells to amplify incoming and outgoing signals. This FET is also used in systems that require multi-standard frequency bands such as GSM, UMTS, and LTE. RF MOSFETs are well known for their low noise figure in comparison with other transistor switch technologies.The working principle of the MRF8P26080HR3 is similar to that of other MOSFETs. The voltage applied from the power source is used to separate electrons from their atoms, creating a layer of positively charged holes. This phenomenon is called the channel state. The electrons in the channel interacts with the gate to create an electric field. This field results in the amplification of the original signal. The main advantage of the MRF8P26080HR3 is that it can be used to amplify signals at very low noise levels. The low noise figure of the FET is one of the main reasons it is so popular in RF applications. This FET also has high power gains, meaning it can be used to amplify signals up to 80 dB. The MRF8P26080HR3 comes in two versions, namely, a surface mount version and a through hole version. Both versions are available in a variety of sizes and ratings. The size and type of the FET depends on the application; for example, for low signal amplification applications, the through hole version is recommended. For higher levels of signal amplification, the surface mount version is recommended.The MRF8P26080HR3 is a versatile and reliable FET device and is a great choice for those looking for an RF amplifier with low noise and high power gains. It is used in various wireless applications for amplifying small to medium signal levels and is great for base station antennas and small cells.The specific data is subject to PDF, and the above content is for reference
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