Allicdata Part #: | MRF8P9040NBR1-ND |
Manufacturer Part#: |
MRF8P9040NBR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 70V 960MHZ TO272-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 320mA 960MHz 19.1dB 4W ... |
DataSheet: | MRF8P9040NBR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 960MHz |
Gain: | 19.1dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 320mA |
Power - Output: | 4W |
Voltage - Rated: | 70V |
Package / Case: | TO-272-4 |
Supplier Device Package: | TO-272-4 |
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A MOSFET, which stands for Metal-Oxide Semiconductor Field-Effect Transistor, is a versatile semiconductor device with many applications in the field of radio frequency (RF) technology. The MRF8P9040NBR1 is a common MOSFET in the radio frequency domain, offering high frequency performance and excellent power handling capability. This article takes a look at the application fields and working principle of this device.
Applications
The MRF8P9040NBR1 is a widely used MOSFET in RF applications. It is often used as a power amplifier, specifically in high frequency applications. In telecommunications, the device is commonly used in linear and wideband amplification, frequency doubling and triple, as well as mobile and base station amplifiers. Additionally, it is suitable for use in other RF applications including radar systems, satellite communication, broadcast equipment and other fields involving high frequency signals.
The MRF8P9040NBR1 also has excellent power handling capability, with a rated maximum power of 8 Watts. This makes it a great choice for many high-power applications such as switching power supplies, radio transmitters and FM transmitters. The device has a maximum drain current of 1.2 Amps and a drain-source breakdown voltage of 40 Volts. These ratings make it ideal for use in a variety of high-power applications.
Working Principle
The MRF8P9040NBR1 is an enhancement-mode MOSFET. This type of MOSFET does not require any additional external voltage or current to turn the device on, unlike depletion-mode MOSFETs. Instead, an increase in the gate-source voltage causes the device to turn on.
When the device is in the off-state, there is no electric current flow between the drain and the source. When a positive voltage is applied to the gate-source voltage, the drain-source resistance decreases, allowing current to flow and the device to turn on. Once turned on, the device will remain on until the voltage between the gate and the source drops below a certain threshold.
In the MRF8P9040NBR1, a low gate-source voltage of just 3 Volts is required for the device to remain on, making it suitable for many low power applications. The device is also capable of withstanding high drain-source voltages, with a maximum breakdown voltage of 40 Volts.
Conclusion
The MRF8P9040NBR1 is a versatile MOSFET suitable for a variety of high-frequency and high-power applications. Its wide application range and excellent power handling capability make it a great choice for many RF applications. The device is an enhancement-mode MOSFET, requiring only a low gate-source voltage of 3 Volts to turn the device on, and has a maximum drain-source breakdown voltage of 40 Volts.
The specific data is subject to PDF, and the above content is for reference
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