Allicdata Part #: | MRF8P23080HR3-ND |
Manufacturer Part#: |
MRF8P23080HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.3GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 280mA 2.3GHz 14.6dB 16W... |
DataSheet: | MRF8P23080HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.3GHz |
Gain: | 14.6dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 280mA |
Power - Output: | 16W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8P23080 |
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The MRF8P23080HR3 is a Marki Microwave FET transistor specifically designed for radio frequency (RF) applications. This N-channel MOSFET features an exceptionally low-noise figure, high-gain figure and low distortion even in high-dynamic range applications. This part is also characterized by an excellent thermal stability for high-frequency operations. All these features make the MRF8P23080HR3 a great choice for RF amplification stages, high-speed switching and any other type of reliable, high-frequency circuit.
The MRF8P23080HR3 is a 20 V tolerant MOSFET with a 125 mA drain-source current rating and an incredibly low 200 Ohm gate drain resistance. This N-channel MOSFET also boasts a maximum output power dissipation of 2 watts at 3 GHz and a wide 2 GHz to 8 GHz frequency range. This part is also designed to withstand voltages up to 21 volts and comes packaged in a 5-lead surface-mount (SM) package. This package is resistive to heat, shock, and vibrations, so it is the perfect option when it comes to long-term reliability.
Although the MFR8P23080HR3 is characterized by good stability and reliability, it is important to find the right combination of gate and drain voltages to ensure optimal performance. To do this, it is essential to understand the working principle of this FET transistor. Working on the principle of voltage control, the MRF8P23080HR3 FET utilizes the applied gate input voltage to control current between the source and drain. This is because the voltage applied to the gate terminal is effectively “seen” by the channel between the source and the drain. By controlling this voltage, effectively controlling the flow of electrons between the source and the drain, the current can be precisely controlled.
The MRF8P23080HR3 is an ideal RF transistor for applications that require low noise, high gain, and excellent thermal stability. For example, this part is commonly used in transceiver applications such as Wi-Fi, remote control and mobile devices, as well as automotive applications, high-speed routers, and radar transmitters. This part is also the perfect choice for RF amplifiers, receivers and other high-frequency circuits. Due to its low noise figure, this part is extremely well-suited for applications requiring low distortion, high-dynamic range, and wide bandwidth.
In conclusion, the MRF8P23080HR3 is a versatile N-channel FET transistor specially designed for radio frequency (RF) applications. Its low noise figure, high-gain figure, low thermal resistance, and wide frequency range make it suitable for numerous applications, including transceiver units, automotive applications, and high-frequency circuits. This part also comes in a 5-lead SM package that is resistant to heat, shock, and vibration, making it the perfect choice for long-term reliability.
The specific data is subject to PDF, and the above content is for reference
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