Allicdata Part #: | MRF8P29300HR5-ND |
Manufacturer Part#: |
MRF8P29300HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.9GHZ NI1230 |
More Detail: | RF Mosfet LDMOS (Dual) 30V 100mA 2.9GHz 13.3dB 320... |
DataSheet: | MRF8P29300HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.9GHz |
Gain: | 13.3dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 320W |
Voltage - Rated: | 65V |
Package / Case: | NI-1230 |
Supplier Device Package: | NI-1230 |
Base Part Number: | MRF8P29300 |
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MRF8P29300HR5 is a wide band single drain GaN Field Effect Transistor (FET) which utilizes advanced Gallium Nitride (GaN) on Silicon Carbide (SiC) technology. It features 180W of 27V drain bias operation, high gain and excellent efficiency. This transistor is ideally suited for linear, wideband small signal, and pulsed and continuous wave applications in the microwave and millimeter-wave frequency range. It is widely used in industries such as aerospace and automotive, because of its wide range of applications.
The MRF8P29300HR5 is a high power, multi-channel GaN FET that can provide up to 180 W of 27 V drain bias operation. It is designed to operate in the 3.2 GHz to 5.2 GHz frequency range, with a typical gain of 11.5 dB and an efficiency of over 65%. The transistor is suitable for linear, wideband small signal, and pulsed and continuous wave applications in the microwave and millimeter-wave frequency range.
The MRF8P29300HR5 has a high breakdown voltage rating of 40V and a high operating temperature range of -30°C to +85°C, making it suitable for use in a wide range of environments. It also features outstanding gain and efficiency, making it ideal for use in a variety of microwave and millimeter-wave applications. The device also features an integrated protection circuit which provides transient protection and helps prevent any potential damage to the transistor due to excessive power dissipation.
The working principle behind the MRF8P29300HR5 is simple. It relies on the transistor’s gate region to produce electrons and holes, which are then injected into the device’s drain region. These electrons and holes will then travel through the drain and source regions, forming an electric current. As the current passes through, it will interact with the gate voltage and produce an amplification effect, increasing the device’s power output. The amplification effect is known as the transistor’s transconductance.
The MRF8P29300HR5 is extensively used in various industries due to its wide range of applications. These include high-power multiport macro base stations, backhaul radio equipment, and point-to-point microwave links. The device is used in the automotive industry for radar transmission and vehicular safety applications. It is also used in surveillance and instrumentation systems, such as Fire Control Radar and Airborne Radar. In the defense industry, the MRF8P29300HR5 is used in high-power battlefield radios, as well as high-power jammers.
The MRF8P29300HR5 is a highly reliable device and is capable of providing high power and excellent efficiency. It is a cost-effective solution for a variety of microwave and millimeter-wave applications. Its features make it a desirable choice for many industries and applications, and its wide range of applications make it an attractive option for designers looking for a versatile and reliable transistor.
The specific data is subject to PDF, and the above content is for reference
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