MRF8S18120HR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	1.81GHz
Gain:	18.2dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	800mA
Power - Output:	72W
Voltage - Rated:	65V
Package / Case:	NI-780
Supplier Device Package:	NI-780
Base Part Number:	MRF8S18120

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RMF8S18120HR3 is a n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) specifically engineered for use with Wi-Fi 802.11ac applications. It is the world’s first MOSFET to satisfy the requirements for the latest 802.11ac standard. The RMF8S18120HR3 allows Wi-Fi transceivers to operate with greater power efficiency and minimize power consumption in order to extend battery life and preserve available system power for other functions. It achieves its performance level by providing low on-resistance, low gate charge, and very low input/output capacitance.

The RMF8S18120HR3 is a depletion-mode, enhancement-mode MOSFET designed for Wi-Fi applications. It features an on-resistance of just 0.9Ω in both its static and dynamic states, which is desirable for applications needing greater power efficiency. Additionally, the RMF8S18120HR3 supports faster switching, a key requirement to maximize throughput performance. Its maximum drain-source voltage (VDS), gate threshold voltage (VGS), and gate-source voltage (VGS) ratings are 12V, -4V, and 5.5V, respectively. It also has an incredibly low gate-source capacitance (C GS ) of 2.1pF, which supports higher data rates.

The RMF8S18120HR3 is ideal for use with Wi-Fi applications. Its low power consumption makes it perfect for battery-operated applications which need small form-factors and greater power efficiency. Additionally, its low capacitance and fast switching capabilities allow transceivers to support data rates up to 867Mbps, making it suitable for high bandwidth applications. Additionally, its low gate charge and on-resistance make it ideal for high switching frequency applications.

The primary function of a MOSFET is to allow the flow of current between two nodes. MOSFETs are typically classified by their type, either N-channel or P-channel. The RMF8S18120HR3 is an n-channel MOSFET that utilizes a depletion mode mechanism for controlling the flow of current. It has a source, drain, and gate terminal, with the source and drain terminals connected to an external circuit, and the gate terminal connected to a voltage source. When a voltage is applied to the gate terminal, it creates an electric field which depletes the channel of free electrons. This depletion in free electrons creates a barrier that hinders the movement of charge carriers and reduces the current flow between the two nodes. The amount of current allowed to flow is determined by the voltage applied to the gate terminal. The lower the voltage, the more electrons are depleted and the lower the current flow.

The RMF8S18120HR3 is designed to operate with a voltage of 12V and requires a gate voltage between -4V and 5.5V. This allows for the precise control of current flow. Additionally, the RMF8S18120HR3 offers a low gate charge, which reduces switching losses and allows for faster switching speeds. The combination of these characteristics, makes the RMF8S18120HR3 an ideal choice for Wi-Fi applications.

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