MRF8S9170NR3

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MRF8S9170NR3 is a silicon N-Channel Power MOSFET, which belongs to the category of transistors-FETs, MOSFETs-RF. It is manufactured by means of a smooth and reliable silicon epitaxial planar structure, which has been optimized for economical RF applications and offers low gate charge, minimal gate resistance and very fast switching speed.

MRF8S9170NR3 is designed to serve as a bridge in broadband and microwave communications systems, such as lightning protection and power applications. Also, the transistor is suitable for the low power amplification, switching, modulation and generation of signals in the range of up to 25 GHz. Furthermore, in order to meet the operational requirements by efficient and reliable performance, it is operating at a supply voltage of 5 V.

MRF8S9170NR3 is composed of three pins, gate, drain and source. The gate, drain and source are critical areas and should be connected to proper voltage levels, because otherwise the device will not function correctly. Also, some degree of protection circuitry is provided, which protect the device from break down in difficult ambient conditions.

The main working principle of MRF8S9170NR3 is to connect and disconnect the source voltage from the load, depending on the given gate voltage. In other words, the gate controls the conduction between the drain and the source. As the gate voltage increases beyond the threshold voltage, it becomes fully conducting, allowing current to flow freely from the drain to the source. On the other hand, when the gate voltage is less than the threshold voltage, the conduction is turned off, this prohibits current to flow.

The performance of MRF8S9170NR3 is achieved through its excellent gate turn-off and low tail current procedure during commutation. Since its gate resistance is as low as 0.29 ohms and gate charge as low as 31 nano-Coulombs, the device provides faster transients and capable of high frequency switching, making it suitable for operation in the higher frequency domain.

In conclusion, the purpose of MRF8S9170NR3 is to serve as a bridge for the electrical current between source voltage and load, depending on the given gate voltage. Being part of the transistors-FETs, MOSFETs-RF category, the device is suitable for broadband and microwave communications systems, lightning protection, power application and signal modulation in high frequency domain. Its great performance is achieved through low gate resistance, low gate charge and fast transients.

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