MRF8S21120HSR3

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MRF8S21120HSR3 is a Surface Mount, 12.5 Volt FET, in the HSR-3 product family, designed for use in high power transmitters operating in the 800/900 MHz frequency range. It is intended for use in commercial and military applications. The HSR-3 series of FETs feature high RF output power, smith chart impedance matching, increased drain efficiency and gain at higher frequencies, reduced gate charge and more.

The MRF8S21120HSR3 is a N-channel, pseudomorphic, high electron mobility transistor ()HEMT). It is a self-biased transistor, meaning it is capable of operating using a supply voltage which is much lower than the voltage that it is intended to flow. The integrated gate-drain capacitor of the transistor also helps to minimize the gate turn-on time, making it ideal for high power applications.

To properly understand the operation of the MRF8S21120HSR3, it is important to discuss the basic principles of operation of HEMT transistors. HEMT transistors are two terminal devices that utilize a two-dimensional electron gas channel, between two very high resistive materials to form the source and drain. This two-dimensional channel allows for high current flow, and is what provides the transistor with its high RF output power.

The source and drain of the MRF8S21120HSR3 are connected to two separate voltage sources. Applying a voltage between these two sources can create an electric field, which in turn will induce a current in the between the two terminals. This current flow is what is known as the drain current. This drain current can be controlled by the gate voltage applied to the transistor, as it is connected in series with the drain.

The MRF8S21120HSR3 is also capable of impedance matching. It has an integrated Smith Chart which can be used to optimize the current flow from the source and drain. This capability is what makes the transistor ideal for high power applications.

The MRF8S21120HSR3 is primarily used in commercial and military transmitters operating in the 800/900 MHz frequency range. It is capable of providing high RF output power and efficiency, making it ideal for these applications. It is also capable of impedance matching, reducing the amount of power needed to drive the transistor.

In summary, the MRF8S21120HSR3 is a high power FET designed for use in transmitters operating in the 800/900MHz range. It utilizes a two terminal, two-dimensional channel to provide high RF output power and also has an integrated Smith Chart for impedance matching. It is intended for use in commercial and military applications.

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