Allicdata Part #: | MRF8S19140HR3-ND |
Manufacturer Part#: |
MRF8S19140HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.96GHZ NI780H |
More Detail: | RF Mosfet LDMOS 28V 1.1A 1.96GHz 19.1dB 34W NI-780 |
DataSheet: | MRF8S19140HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.96GHz |
Gain: | 19.1dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 34W |
Voltage - Rated: | 65V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF8S19140 |
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The MRF8S19140HR3 is a FET (Field Effect Transistor) used in radio frequency applications such as amplifiers, oscillators, and circuits used in radar systems and wireless base station applications. It is a type of MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) that works by using an electric field to control the flow of output current through a channel between the drain and source.
This device is a n-channel transistor that has a breakdown voltage of 60 V and an RDS(on) of 0.22Ω. It has a maximum power dissipation of 140W. The maximum operating temperature for this device is 175°C. It features low on-resistance, high current and excellent thermal stability.
MRF8S19140HR3 FETs are commonly used as power amplifiers in various radio frequency applications. As with all power amplifiers, it is used to increase the power of the input signal to a level that can drive the load efficiently. In radio frequency applications, the power amplifier is used to boost the signal so that it can be received by the intended receiver.
MRF8S19140HR3 FETs are also used in oscillator circuits. Oscillators are circuits that produce an alternating output signal with a frequency determined by the components of the circuit. These types of circuits are used in applications such as radio frequency amplifiers, frequency synthesisers and remote controls.
MRF8S19140HR3 FETs are also used in timing circuits. Timing circuits are used to control the length of time of an electrical pulse. They are often used in radar systems and high frequency communications systems.
The working principle of the MRF8S19140HR3 is similar to any other FET. When a voltage is applied to the gate electrode, an electric field is induced between source and drain which controls the current flow between the source and drain. The output current is controlled by the voltage on the gate electrode. When the gate voltage is increased, the electric field also increases resulting in a larger output current. Similarly, when the gate voltage is decreased the electric field decreases resulting in a lower output current. This is how the MRF8S19140HR3 works.
In conclusion, the MRF8S19140HR3 is a versatile device that can be used for a wide range of radio frequency applications such as power amplifiers, oscillators, timing circuits and more. It is a reliable and robust device with high current carries and excellent thermal stability. It is ideal for applications that require high performance in a range of radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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