MRF8S21120HR3

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The MRF8S21120HR3 is a field effect transistor (FET) that is specifically designed for radio frequency (RF) use and applications. The device is available in a SOT682 surface mount package and has been optimized for maximum output power at frequencies of up to 8 GHz. It is part of a series of devices that includes the MRF8S21120HR2, which is a lower power version, and the MRF8S21120HD3, which is a higher power version.

The MRF8S21120HR3 is a 12V MOSFET which is capable of operation at high frequencies with excellent efficiency. It is also capable of switching high current loads with excellent linearity and superb pulse response. The device is characterized over the frequency range of 500MHz to 8GHz and has a maximum drain-source breakdown voltage of 21V. Other features include a low on-state resistance (RDS) for efficient switching and good high frequency linearity.

The working principle of a MOSFET is based upon the principle of field-effect mobility. This effect occurs when a drain-source bias is applied to the MOSFET, causing a current to flow in the channel between source and drain. The current that flows in the channel is known as the drain current. The drain current is influenced by the gate-source voltage, allowing the device to be used as a switch or an amplifier. The drain current will increase as the gate voltage rises, leading to greater power gain in the device.

In the case of the MRF8S21120HR3, the device can be used as a switch to control the flow of current between its source and drain lines. When the gate is driven with a suitable voltage, the device can be made to switch at speeds up to 8GHz. The device is also capable of operating with low power losses, making it well-suited for use in radio-frequency applications. It can also be used in other applications where high-speed, low-power switching is required, such as in the switching of high current loads.

The MRF8S21120HR3 is a high-performance device that has been designed for demanding RF applications. It is capable of operating with signal frequencies up to 8GHz, making it ideal for use in high-speed systems. Its low-power switching capabilities make it well-suited for use in low-power systems, while its high-frequency linearity and superb pulse response make it an excellent choice for high-frequency applications. The device is available in a SOT682 surface mount package and has been optimized for maximum output power at frequencies of up to 8GHz.

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