MRF8S19260HR6

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The MRF8S19260HR6 is an RF Power Field Effect Transistor (FET) designed for wireless applications such as Cellular, LTE, Wi-Fi and Bluetooth. It has a highly insulated metal-oxide-semiconductor structure and features a low resistance silicon drain contact that provides superior performance. The MRF8S19260HR6 is an ideal choice for amplifier applications and is capable of providing 30W of peak episodic power with 25.5 dB of gain at a frequency of 2.7 GHz.

Applications

The MRF8S19260HR6 can be used in various applications such as cellular, LTE, Wi-Fi and Bluetooth. It is an ideal choice for power amplifiers, power transistors and RF/microwave components. It can also be used for point-to-point radio, mobile radios and military communications. The MRF8S19260HR6 is also suitable for other amplifier-related applications such as low noise amplifiers (LNAs), intermediate frequency amplifiers (IFs), digital predistortion linearizers (DPDL) and envelope tracking systems.

Working Principle

The MRF8S19260HR6 is based on a metal-oxide-semiconductor field effect transistor (MOSFET) structure. The transistor consists of two metals, the source (S) and the drain (D), and an insulator between them. The source is where the input signal is applied while the drain is where the amplification occurs. The MRF8S19260HR6 employs a low-resistance silicon drain contact, which allows the transistor to operate with higher efficiency and lower power dissipation than conventional MOSFETs. The transistor also has a high breakdown voltage, which eliminates the need for a voltage multiplier to achieve higher output power levels.

The transistor’s maximum DC drain-source voltage (VDS) is 50V, a DC Gate-Source voltage (VGS) of up to 25V and an operating temperature of –55°C to +150°C. It is designed to operate in a monopolar region, meaning drain to source voltage is positive and the gate to source voltage is positive. The MRF8S19260HR6 has a wide range of possible bias configurations, offering superior flexibility for a wide range of applications.

Conclusion

The MRF8S19260HR6 is an ideal choice for wireless applications such as Cellular, LTE, Wi-Fi and Bluetooth due to its low resistance silicon drain contact and high breakdown voltage. It can be used in various power amplifiers, RF/microwave components and other amplifier-related applications. This transistor is also capable of providing 30W of peak episodic power with 25.5dB of gain at a frequency of 2.7GHz.

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