MRF8P20160HSR3

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The MRF8P20160HSR3 is a RF power transistor that is based on the 15V Ldmos process. It is a versatile, high-performance device that has a wide range of applications in the wireless communications industry. This device is especially suited for power amplifiers in the 900 MHz frequency band, and can also be used in other RF applications. In this article, we will take a look at the application field and working principle of the MRF8P20160HSR3.

The MRF8P20160HSR3 is a single-ended RF power transistor with a drain current rating of 1,800mA and a maximum drain-source voltage rating of 15V. It has a drain efficiency of 71 percent and a gain of 8.5dB typ in the 900 MHz frequency band. The device is designed for Class AB operation, with a minimum operating frequency range of 400 to 1000 MHz and a maximum operating frequency of 2.5 GHz. The RF output power of the device is 50W. The device also has integrated protection circuitry for under-voltage lockout, over current protection, and thermal shutdown.

The MRF8P20160HSR3 is a versatile transistor which can be used in a wide range of different applications. These include power amplifiers in the 900 MHz frequency band, as well as transmitters and receivers. The device is also suitable for use in RF test equipment, satellite communications, cellular base station applications and other wireless communication systems. The device offers excellent linearity, ruggedness, and power efficiency in these applications.

The MRF8P20160HSR3 transistor works on the principle of field effect. This means that the charge carriers (electrons or holes) are controlled by an electrostatic field rather than by direct current. This type of transistor is known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The device works on the principle of depletion layer modulation, where the conductivity of the channel is modulated by biasing the gate terminal. This allows the transconductance of the device to be precisely adjusted, allowing it to be used in a wide range of applications.

The MRF8P20160HSR3 is a high-performance, versatile transistor that can be used for a wide range of applications in the wireless communications industry. Its high gain and power efficiency make it ideal for use in power amplifiers in the 900 MHz frequency band, as well as transmitters and receivers. The device works on the principle of field effect, making it suitable for a range of different applications. The integrated protection circuitry also provides additional safety and reliability.

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