MRF8S9100HR5

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The MRF8S9100HR5 is a vertical double diffused metal oxide semiconductor (VDMOS) transistors designed for use in High power amplifiers operating in the frequency range of 0.7 to 900 MHz. It utilizes a wide spacing structure to achieve low thermal resistance and highlights a substrate resistance of low inductance. The device is a recommended choice for applications such as Analog and Digital TV Broadcast, Line Drivers, Broadband Power Amplifiers and Land Mobile Radio Systems.

An MRF8S9100HR5 is composed of three parts – the gate, the drain and the source. The gate is an electrode used for controlling the current flow in the device. It is connected to the gate-load of the transistor and works in conjunction with the gate voltage to control the on/off states of the device. The drain is electrically connected to the drain-load and is the current carrying electrode. The source of the device is where the current enters the device and is the input connection point.

Working Principle of MRF8S9100HR5: The MRF8S9100HR5 operates on the principle of Depletion Mode MOSFET (D-MOS), wherein a semiconductor has its gate and source terminals connected to the same type of material forming a capacitor-like structure. When the gate voltage is applied, the electric field in the depletion zone creates a barrier between the gate and source, blocking current from flowing through the device. When the Drain voltage is applied to the drain terminal, the stored electric field breaks down the depletion zone and allows current to flow through the device.

The MRF8S9100HR5 device is widely used in High power amplifiers for Analog and Digital TV Broadcast, Line Drivers, Broadband Power Amplifiers and Land Mobile Radio Systems. Due to its high power gain, excellent linearity and low cost, the device is widely accepted as a perfect choice for these applications. It offers a variety of features such as high inter-modulation distortion, high reliability and low fouling points. The VDMOS transistors also offer power in excess of 1TV of power per channel. This makes the MRF8S9100HR5 ideal for applications where low power dissipation and high reliability are required.

The transistors feature a vertical double diffused construction that has low thermal resistance and low substrate inductance. This allows the device to handle increased power demands and provides high gains even at low frequencies. The gate-load is also designed to reduce gate threshold voltage drift and to improve thermal stability, ensuring lower distortion even at high operating temperatures. In addition, the device utilizes a low series gate resistor to reduce gate voltage drops, increase power efficiency and reduce power dissipation that leads to device damage.

The MRF8S9100HR5 is ideal for High power amplifiers and other related applications that require reliable operation and excellent linearity. The device has several features such as high power gain, excellent linearity, high reliability and low fouling points. Its low cost and wide spacing structure also make it a perfect choice for these applications. The MRF8S9100HR5 is widely accepted by most RF engineers due to its high performance and reliable operation.

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