Allicdata Part #: | MRF8P20100HR3-ND |
Manufacturer Part#: |
MRF8P20100HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.03GHZ NI780H-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 400mA 2.03GHz 16dB 20W ... |
DataSheet: | MRF8P20100HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.03GHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 20W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8P20100 |
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The MRF8P20100HR3 is a high-performance, high-power, broadband RF Trans Electronic Field Effect Transistor that is designed and optimized for use in wireless and broadcast applications requiring high power efficiency, small size and broadband operations in the 820-960 MHz frequency range. The MRF8P20100HR3 has a rated output power of 100 watts with an associated gain of 12 dB and a power added efficiency of 33%. It has a super-high input and output power capability, which is a necessity for applications where dynamic range and linearity are important.
This RF Trans Electronic Field Effect Transistor (FET) is ideal for use in the signal amplification of commercial and military communications systems, including land mobile radio, high-capacity private voice and data systems, land mobile navigation systems, remote control systems, telemetry systems, and high-power transmitter designs used in base stations and remote repeaters.
The MRF8P20100HR3 employs premium junction field-effect transistors (JFET) that provide superior broadband performance and are designed to operate in a wide variety of RF power amplifiers and broadband radio applications. The combination of superior performance, small size and high gain make the MRF8P20100HR3 the ideal choice for use in a wide range of commercial and military communications systems. The FET also features an adjustable bias control for efficient operating temperature control in order to minimize its temperature rise even when operating at full ratings.
In addition to its high-power output capability and reliability, the RF Trans Electronic Field Effect Transistor (FET) also offers efficient performance over a wide frequency range. The FET\'s superior frequency response ensures compatibility with modern communications systems which employ multiple frequency bands and therefore require signal frequencies to be accurately tracked over a wide range. FETs have the unique ability of being able to be physically scaled very quickly, which enables the device to be used in multiple configurations for various applications.
In terms of its working principle, the RF Trans Electronic Field Effect Transistor (FET) utilizes a two-node arrangement. This two-node arrangement allows the FET to efficiently convert high-frequency signals into low-frequency signals or vice versa, resulting in the amplification or switching of radio frequency (RF) signals. By utilizing a dynamic pass transistor design, the FET is able to control the voltage-controlled gain and current inversely, resulting in optimal switching and dynamic voltage control. The FET\'s two-node design enables it to be used in multiple configurations, which makes it perfect for a range of commercial and military communications systems.
Overall, the MRF8P20100HR3 offers superior performance and is ideal for applications requiring high power efficiency, small size and broadband operations. Its dynamic pass transistor design enables superior voltage and current control, resulting in efficient switching and dynamic voltage control, while its two-node arrangement allows for the efficient conversion of RF signals. As such, the MRF8P20100HR3 is the ideal device for a wide range of commercial and military communications applications.
The specific data is subject to PDF, and the above content is for reference
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