MRF8S18260HR6

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MRF8S18260HR6 Application Field and Working Principle

The MRF8S18260HR6 is a silicon N-Channel MOSFET which belongs to the family of RF (Radio Frequency) MOSFETs. These transistors are used in high frequency electrical applications, such as TV and radio transmitters, and can provide enhanced levels of power and reliability.

In RF MOSFETs, a MOSFET structure is employed to enhance the current transfer capability and linearity. The N-channel of this MOSFET enables it to be used in an enhancement-mode, which means it can be used with a DC current bias to provide a certain level of RF gain without being limited by the low current control of a P-channel device.

The MRF8S18260HR6 has a rated drain-source voltage of 60V, a drain current of 15A, and a gate-source voltage of ±12V. It has a low output capacitance of 0.37pF, which helps to reduce distortion and helps to achieve a high frequency response. It has an excellent breakdown voltage of 300V and a high thermal resistance of 2.6°C/W. This makes it an ideal choice for high power applications.

The working principle behind RF MOSFETs is based on a gate-source voltage (Vgs) applied to the gate of the device, which in this case is a N-channel MOSFET. The voltage applied to the gate will create an electric field that will open up a channel in the device. This channel allows current to flow from the drain (D) to the source (S). This is known as “punch through” and is used to reduce the on-state resistances of the device.

The MRF8S18260HR6 has a wide variety of applications, including TV and radio transmitters, linear power amplifiers, switching applications,and low noise amplifiers (LNAs). In these applications, the device is used to amplify small signals, manage current flow, and reduce distortion. This MOSFET is also able to handle high peak power levels, which makes it well-suited for high power applications.

In summary, the MRF8S18260HR6 is a N-Channel RF MOSFET with a wide variety of applications in radio and TV transmitters. Its features provide enhanced levels of power and reliability, and performance. It is designed to provide a low output capacitance and high breakdown voltage, making it suitable for high power applications. Its working principle is based on gate-source voltage, which creates an electric field that allows current to flow from the drain to the source when a certain voltage is applied to the gate. This MOSFET is a great choice for high frequency electrical applications, such as TV and radio transmitters.

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