MRF8S18260HSR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF8S18260HSR6 is a N-Channel Enhancement Mode enhancement mode transistor specifically designed for VHF/UHF TV and broadcasting applications. It is classified as a RF FET (Field Effect Transistor). It has a high-input power gain and can be used for radio frequency (RF) amplification in transmitters and RF amplifiers.

The MRF8S18260HSR6 is an ideal component for use in low-noise, high-gain amplifiers and circuits, due to its low input noise figure and high gain. Its low noise figure is well-suited to use in broadcast systems, where high levels of background noise can corrupt the signal.

The MRF8S18260HSR6 is best suited for operating in the VHF range of frequencies, from 30 MHz to 250MHz, and also in the UHF range (300MHz to 2000MHz). It is capable of outputting a maximum Drain current of 240mA and can handle a maximum drain-source voltage of 60 volts.

The RF transistor is also physically small - it only measures 7mm wide, 5mm high and 3.2mm deep – which makes it suitable for use in compact devices. It is also relatively lightweight, with a mass of 0.03oz.

The MRF8S18260HSR6 advantages lie in its high power gain at low-noise levels and its compatibility with VHF and UHF frequencies. It is also efficient, with a total power dissipation of 700mW, and economical, with a typical construction cost of around US $8.

So how does the MRF8S18260HSR6 actually work? Put simply, it is an enhancement-mode field-effect transistor, where the Drain is controlled by the Gate and the flow of current essentially depends on the electrode voltage. When a negative voltage is applied to the Gate, electrons accumulate in the region between the Source and the Drain and form a conducting channel, allowing current to flow from the Source to the Drain.

In addition, the MRF8S18260HSR6 has a Gate-Source threshold voltage, with a minimum of 2V required before the Gate will activate, which ensures that current does not flow until it is specifically required.

In summary, the MRF8S18260HSR6 is a N-Channel RF transistor that is ideal for broadcast applications and is specifically designed to operate in the VHF and UHF frequency bands. It has a high power gain and a low total power dissipation of 700mW, making it highly efficient and economical. Its Gate-Source threshold voltage ensures that current will not flow unless it is specifically required. The MRF8S18260HSR6 is physically small and lightweight, making it ideal for use in compact devices.

The specific data is subject to PDF, and the above content is for reference