MRF8P20140WHSR3

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The MRF8P20140WHSR3 is a GaAs Power MOSFET Transistor for use in RF applications that require high efficiency and linearity. This discrete transistor provides a higher level of efficiency and power output than many bipolar devices.

The MRF8P20140WHSR3 is a laterally diffused metal oxide semiconductor FET (Lateral-D MOSFET). This particular device is found as an N-channel device (NLDMOS) which offers superior performance over traditional enhancement-mode power MOSFETs. It produces higher gain, wide range of linearity, and improved heat distribution compared to other power MOSFETs used in similar applications.

The MRF8P20140WHSR3 offers superior reliability in applications requiring high power and linearity. It is ideal for use in telecom/data base station amplifier systems as well as commercial and military applications. This device was specifically designed to provide high efficiency, high output power, high frequency operation, low input current, linear operation at low power and high output power, and superior reliability.

The MRF8P20140WHSR3 has a high current rating of 40A with a breakdown voltage of 25V, making it suitable for high voltage and low power environments. Its thermal resistance Rt is 5.3 degrees Celsius per watt, and its Qg is 15.9nC.

In terms of its application field, the MRF8P20140WHSR3 is used in a wide variety of applications such as Data/Telecom Base Stations, Wireless Infrastructure, Mobile Telephone Transceivers, Antenna Front Ends and more.

In terms of its working principle, the MRF8P20140WHSR3 functions by utilizing the principles of hot electron injection (HEI). Hot electron injection utilizes the kinetic energy of electrons injected at high temperatures to produce hot electrons at lower voltages. The device acts as a linear amplifier, amplifying an input signal simultaneously in both channels and producing a high-power output. Hot electron injection reduces power loss and increases efficiency, making this an ideal device for applications requiring high power output.

The MRF8P20140WHSR3 is a great choice for those looking for a high-performance discrete FET device for handling high-power RF applications. This device is reliable, capable of producing high power, and offers superior linearity.

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