Allicdata Part #: | MRF8P20165WHR3-ND |
Manufacturer Part#: |
MRF8P20165WHR3 |
Price: | $ 74.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.01GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 550mA 1.98GHz ~ 2.01GHz... |
DataSheet: | MRF8P20165WHR3 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 68.09990 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.98GHz ~ 2.01GHz |
Gain: | 14.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 550mA |
Power - Output: | 37W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8P20165 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF8P20165WHR3, made by Macronix, is a RF power transistor with some unique features and versatile application field, making it ideal for most RF and UWB applications.
MRF8P20165WHR3 is a N-Channel MOSFET, which means it works as a voltage-controlled switch. This type of switch is particularly ideal for RF applications where low gate-source drive is necessary. It is also well-suited for UWB applications requiring low gate-threshold voltage.
MRF8P20165WHR3 features a drain-source breakdown voltage of 48 V, a drain-source on-state resistance of 0.0035 Ohm and a current handling capability of 1.5 Amps. It also has a maximum drain-source power dissipation rating of 9.4 Watts, and a gate-source threshold voltage of -1.7 V. This device is housed in a leadless 3x2mm/0.6mm package, making it suitable for space constrained designs.
The impressive features of the MRF8P20165WHR3 make it suitable for high-frequency switching and linear applications, including automotive and industrial applications. This transistor can be used to build power amplifiers, LNAs or LNAs with gain, ultra-wideband PAs, signal conditioning circuits and more.
The working principle of the MRF8P20165WHR3 is quite simple. When a positive voltage is applied to the gate relative to the source, it creates a channel between the drain and the source that allows current to pass. When no voltage is applied to the gate, current cannot pass through the transistor. Thus, the transistor is used to control the current flow by varying the voltage applied to the gate.
In conclusion, the MRF8P20165WHR3 is a high-performance, versatile RF power transistor. It features a drain-source breakdown voltage of 48 V, a drain-source on-state resistance of 0.0035 Ohm and a current handling capability of 1.5 Amps, making it suitable for high-frequency switching and linear applications, including automotive and industrial applications. The working principle of this device is quite simple and it can be used to construct amplifiers, signal conditioning circuits and more.
The specific data is subject to PDF, and the above content is for reference
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