MRF8372R2

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The MRF8372R2 is a high performance, wideband and wide dynamic range NPN Silicon bipolar junction transistor (BJT) especially designed for use in amplifiers in the 2000 MHz to 2600 MHz frequency range. It is rated at 48 V and 25 watts of RF output power and is suitable for use in small cell base station equipment, point-to-point radio systems and digital mobile radio (DMR) applications, covering 2000 to 2600 MHz.

The MRF8372R2 has a low noise figure typically of 2 dB at 1 Watt, high gain at 25 dB minimum and high power added efficiency at 32%. It has a low set of input and output impedances of 50 Ohms, making it suitable for use in a wide variety of applications.

The MRF8372R2 RF transistor is designed with a metal-oxide-semiconductor field-effect transistor (MOSFET) process. The MOSFET process enables transistors with higher breakdown voltage and higher power handling. This makes the MRF8372R2 suitable for use in high-volume electronics where the highest power handling is required.

The MRF8372R2 is easy to use. The transistor operates with a constant output power of 24 dBm. It features wide input power variation, thus enabling the amplifier to be used for both low-power and high-power applications. This ensures efficient operation and is important for reliable performance and high quality of service.

The MRF8372R2 includes several additional features. It has a low thermal impedance of 0.2°C/watt, enabling it to dissipate heat quickly and operate with lower temperatures. This makes it suitable for use in high temperature applications. Additionally, it has a built-in active bias circuit, which optimizes gain and improves linearity. This helps it to achieve higher levels of performance.

The MRF8372R2 is a versatile transistor that can be used in several different applications. It can be used for small cell base station equipment and point-to-point radio applications. It can also be used for digital mobile radio (DMR) systems and high-power amplifier applications. Moreover, it is ideal for use with high quality frequency synthesizers and modulators.

In summary, the MRF8372R2 is an excellent high performance wideband and wide dynamic range NPN Silicon bipolar junction transistor (BJT) designed for use in 2 GHz to 2.6 GHz frequency range. It offers low noise figure, high gain and high power added efficiency. It is ideal for applications requiring high performance and high quality of service. The MRF8372R2 is a versatile transistor that can be used in various applications ranging from small cell base station equipment to high power amplifier applications.

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