Allicdata Part #: | MUN5113T3G-ND |
Manufacturer Part#: |
MUN5113T3G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN5113T3G Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.01484 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN51**T |
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The MUN5113T3G is an NPN transistor that functions as a single, pre-biased transistor. It is designed to be stable and can be used in a variety of applications. It has a wide-ranging current rating of up to 5 A, a voltage rating of up to 200 V, and can operate in the temperature range of -40°C to 150°C. The MUN5113T3G is designed for use in high-voltage applications and low-noise circuits, and is an ideal choice for applications such as DC-DC converters, power supply circuits, and audio amplifiers.
The MUN5113T3G feature an NPN transistor configuration with its base connected to an external voltage source and its collector connected to the load. This connection design allows for easy and efficient current flow. The transistor can be adjusted with the base voltage, allowing for varying levels of current flow. The base voltage is typically set to a value of in between 0.7-1.2 Volts, allowing the MUN5113T3G to operate as a low noise transistor.
The MUN5113T3G also features a low voltage drop, a low on-resistance, and a fast switching speed. This allows the transistor to operate at higher frequencies, making it suitable for use in high speed circuits. The MUN5113T3G also has a fast recovery time, and it is designed to reduce switching losses when operating at high speed. Additionally, the package is designed to increase power density and ensure high reliability.
When using the MUN5113T3G, the base voltage must be carefully controlled to ensure optimal performance. The base voltage should be set to a value between 0.7-1.2 Volts for low noise applications, and can be adjusted to higher values for higher voltage applications. Care should also be taken to ensure that the collector current flow is not excessive, as this can lead to excessive heat dissipation and stress on the transistor.
The MUN5113T3G is ideal for use in high voltage, low noise, and high speed applications. Its design allows for efficient current flow and fast recovery time, making it suitable for use in DC-DC converters, power supplies, and audio amplifiers. Care should be taken when adjusting the base voltage to ensure optimal performance, and to avoid excessive heat dissipation or stress on the transistor. With proper use, the MUN5113T3G can provide reliable and efficient performance in a variety of high voltage and high speed circuits.
The specific data is subject to PDF, and the above content is for reference
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