MUN5312DW1T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	MUN53**DW1

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MUN5312DW1T1G is a three-channel pre-biased bipolar transistor array (BJT) intended for linear and switching applications. It provides low base-emitter saturation voltage and high power dissipation capability, making it well suited for high efficiency power amplifiers, switching applications, and high speed digital circuits. The device consists of three NPN transistors with integrated base-emitter and base-collector resistors.The device is constructed with advanced manufacturing processes to ensure high gain, low offset voltage and excellent temperature stability. The integrated resistors reduce the number of external components needed for operation, reducing overall device costs. The integrated resistors also provide a slight current limiting capability, allowing for more efficient operation in switching applications. The device is rated for a peak current of 10A and a power dissipation of 45W. This makes it ideal for use in high efficiency power amplifiers and switching applications. The architecture of the MUN5312DW1T1G consists of three identical NPN transistors arranged in an array. One base terminal is shared between all three transistors, as are two of the collector terminals. This allows for higher current outputs as the current can easily flow between the transistors. The integrated resistors reduce the size of the device and also provide a slight current limiting function. The device is rated for a peak current of 10A and a power dissipation of 45W. This makes it ideal for use in high efficiency power amplifiers and switching applications.The working principle of MUN5312DW1T1G consists of three identical NPN transistors. When a voltage is applied to the shared base terminal, it creates a small reverse biased barrier at the shared base-emitter junction. This weakens the base-collector junction and allows for current to flow through the transistors. The integrated resistors provide a small amount of current limitation due to their resistance, allowing for more efficient operation in switching applications. The MUN5312DW1T1G is ideal for use in high efficiency power amplifiers, switching circuits, and high speed digital circuits. It provides excellent temperature stability and a low base-emitter saturation voltage. The device can also operate efficiently in applications up to 45W with a peak current of 10A. The integrated resistors reduce the overall cost of the device and provide a slight current limiting capability. This allows the device to be used in a wide range of applications. In conclusion, the MUN5312DW1T1G is a three-channel pre-biased bipolar transistor array (BJT) intended for linear and switching applications. It provides low base-emitter saturation voltage and high power dissipation capability, making it well suited for high efficiency power amplifiers, switching applications, and high speed digital circuits. The device is rated for a peak current of 10A and a power dissipation of 45W, creating an ideal solution for high efficiency power amplifiers and switching applications. The device is unique in that it integrates base-emitter and base-collector resistors, reducing the number of external components needed for operation and making it cost effective. The integrated resistors also provide a slight current limiting capability, allowing for more efficient operation in switching applications.

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