MUN5111T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	202mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70-3 (SOT323)
Base Part Number:	MUN51**T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

What is MUN5111T1G?
MUN5111T1G is a single, pre-biased Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured with an integrated temperature compensation mechanism that is designed for high performance and low on-resistance (RDS(on)) power applications in a variety of commercial, industrial and automotive applications.

The MUN5111T1G offers low conduction losses, combined with low gate threshold voltage (VGS(th)), making it suitable for applications such as switch mode power supplies, DC-DC converters, power supplies, audio power amplifiers, etc.

Application Field
MUN5111T1G is used for a variety of applications, including:
• Switch Mode Power Supplies (SMPS): MUN5111T1G transistor can be used in DC-DC converters, switching regulators and other kinds of power conversion circuits.
• DC-DC Converters: MUN5111T1G is suitable for applications such as point-of-load (POL) converters and end-manufacturers AC/DC power supplies.
• Power Inverters: MUN5111T1G is suitable for applications such as solar cell inverters, off-grid power inverters, etc.
• Audio Power Amplifiers: MUN5111T1G is suitable for use in audio power amplifiers for amplifying audio signals.
• Automotive Applications: The MUN5111T1G transistor is suitable for use in automotive applications such as engine control, ignition systems, and light emitting diode (LED) controllers.
• Other Applications: MUN5111T1G can also be used in other applications such as battery charging systems, charger circuits, AC and DC to DC power converters, etc.

Working Principle
The MUN5111T1G transistor is a single, pre-biased metal oxide semiconductor field effect transistor that employs a floating source NMOS (N-channel MOSFET) integrated with an integrated temperature compensation mechanism. This allows the MOSFET to be operated at elevated temperatures, such as those encountered in automotive applications, without increased power consumption or failures due to thermal runaway.

The floating source NMOS integrated in MUN5111T1G supports the handling of high forward current and high switching energy. This allows the transistor to handle high power pulses and provide a fast response, making it ideal for high-speed switching.

The integrated on-resistor (RDS(on)) of MUN5111T1G coupled with the low gate threshold voltage (VGS(th)) support low conduction loss, low switching losses and fast switching times, making it ideal for applications requiring efficient and high power handling.

The combination of low VGS(th), low RDS(on) and high maximum operating junction temperature support reliable and efficient operation even in the presence of high thermal gradients, making MUN5111T1G suitable for a variety of commercial, industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description